A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics

doi:10.1088/1674-1056/21/9/097104

Abstract An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the AlGaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger's and Poisson's equations.

Keywords: AlGaN/GaN heterostructures flat-band voltage polarization charge density

Received: 10 January 2012
Revised: 02 March 2012
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	74.78.Fk	(Multilayers, superlattices, heterostructures)
	77.22.Ej	(Polarization and depolarization)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10774090 and 11174182), the National Basic Research Program of China (Grant No. 2007CB936602), and the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005).

Corresponding Authors: Lin Zhao-Jun
E-mail: linzj@sdu.edu.cn

Cite this article:

Lü Yuan-Jie (吕元杰), Lin Zhao-Jun (林兆军), Yu Ying-Xia (于英霞), Meng Ling-Guo (孟令国), Cao Zhi-Fang (曹芝芳), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国) A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics 2012 Chin. Phys. B 21 097104

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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current–voltage and capacitance–voltage characteristics

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