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Chin. Phys. B, 2012, Vol. 21(8): 087304    DOI: 10.1088/1674-1056/21/8/087304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Formations and morphological stabilities of ultrathin CoSi2 films

Zhu Zhi-Weia, Gao Xin-Dongb, Zhang Zhi-Binb, Piao Ying-Huaa, Hu Chenga, Zhang David-Weia, Wu Dong-Pinga
a State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;
b Solid-State Electronics, the Ångström Laboratory, Uppsala University, Box 534, 75121 Uppsala, Sweden
Abstract  In this paper we investigate the formations and morphological stabilities of Co-silicide films using 1-8-nm thick Co layers sputter-deposited on silicon (100) substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For Co layer with a thickness no larger than 1 nm, epitaxially aligned CoSi2 films readily grow on silicon (100) substrate and exhibit good morphological stabilities up to 600 ℃. For Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of Ni layer for epitaxial alignment of NiSi2 on silicon (100) substrate. The larger lattice mismatch between CoSi2 film and silicon substrate is the root cause for the smaller critical thickness of the Co layer.
Keywords:  silicide      epitaxial alignment      ultrathin film  
Received:  22 December 2011      Revised:  19 March 2012      Accepted manuscript online: 
PACS:  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  68.35.Dv (Composition, segregation; defects and impurities)  
  85.40.Ls (Metallization, contacts, interconnects; device isolation)  
Fund: Project supported by the "China National Science and Technology Major Project 02" (Grant No. 2009ZX02035-003), the National Natural Science Foundation of China (Grant No. 61176090), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning.
Corresponding Authors:  Wu Dong-Ping     E-mail:  dongpingwu@fudan.edu.cn

Cite this article: 

Zhu Zhi-Wei, Gao Xin-Dong, Zhang Zhi-Bin, Piao Ying-Hua, Hu Cheng, Zhang David-Wei, Wu Dong-Ping Formations and morphological stabilities of ultrathin CoSi2 films 2012 Chin. Phys. B 21 087304

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