Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

doi:10.1088/1674-1056/21/8/084201

Abstract In this work, a 90-nm critical dimension (CD) technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating (BARC). By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is very bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.

Keywords: lithography optimization photoresist thichness critical dimension swing curve

Received: 10 December 2011
Revised: 20 January 2012
Accepted manuscript online:

PACS:	42.25.Bs	(Wave propagation, transmission and absorption)
	42.25.Kb	(Coherence)
	42.30.Kq	(Fourier optics)
	42.70.Gi	(Light-sensitive materials)

Fund: Project supported by the National Special Program of China (Grant No. 2009ZX02204-008) and the National Basic Research Program of China (Grant No. 2007AA01Z333).

Corresponding Authors: Cao Yi-Ping
E-mail: ypcao@scu.edu.cn

Cite this article:

Chen De-Liang (陈德良), Cao Yi-Ping (曹益平), Huang Zhen-Fen (黄振芬), Lu Xi (卢熙), Zhai Ai-Ping (翟爱平 ) Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography 2012 Chin. Phys. B 21 084201

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Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

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