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Chin. Phys. B, 2012, Vol. 21(8): 084201    DOI: 10.1088/1674-1056/21/8/084201
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

Chen De-Liang, Cao Yi-Ping, Huang Zhen-Fen, Lu Xi, Zhai Ai-Ping
Department of Opto-Electronics, Sichuan University, Chengdu 610065, China
Abstract  In this work, a 90-nm critical dimension (CD) technological process in an ArF laser lithography system is simulated, and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating (BARC). By analysing the simulation result, it can be found that in the absence of BARC the CD swing curve effect is very bigger than that in the presence of BARC. So, the BARC should be needed for the 90-nm CD manufacture. The optimum resist thickness for 90-nm CD in the presence of BARC is obtained, and the optimizing process in this work can be used for reference in practice.
Keywords:  lithography      optimization      photoresist thichness      critical dimension      swing curve     
Received:  10 December 2011      Published:  01 July 2012
PACS:  42.25.Bs (Wave propagation, transmission and absorption)  
  42.25.Kb (Coherence)  
  42.30.Kq (Fourier optics)  
  42.70.Gi (Light-sensitive materials)  
Fund: Project supported by the National Special Program of China (Grant No. 2009ZX02204-008) and the National Basic Research Program of China (Grant No. 2007AA01Z333).
Corresponding Authors:  Cao Yi-Ping     E-mail:  ypcao@scu.edu.cn

Cite this article: 

Chen De-Liang, Cao Yi-Ping, Huang Zhen-Fen, Lu Xi, Zhai Ai-Ping Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography 2012 Chin. Phys. B 21 084201

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