Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

doi:10.1088/1674-1056/19/3/037503

Abstract This paper reports that a CoFe/IrMn bilayer was deposited by high vacuum magnetron sputtering on silicon wafer substrate; the thermal relaxation of the CoFe/IrMn bilayer is investigated by means of holding the film in a negative saturation field at various temperatures. The exchange bias decreases with increasing period of time while holding the film in a negative saturation field at a given temperature. Increasing the temperature accelerates the decrease of exchange field. The results can be explained by the quantitative model of the nucleation and growth of antiferromagnetic domains suggested by Xi H W et al. [2007 Phys. Rev. B 75 014434], and it is believed that two energy barriers exist in the investigated temperature range.

Keywords: thermal relaxation exchange bias energy barrier CoFe/IrMn bilayer

Received: 04 May 2009
Revised: 10 June 2009
Accepted manuscript online:

PACS:	75.70.Ak	(Magnetic properties of monolayers and thin films)
	75.50.Ee	(Antiferromagnetics)
	75.60.Ch	(Domain walls and domain structure)
	68.55.A-	(Nucleation and growth)
	75.60.Ej	(Magnetization curves, hysteresis, Barkhausen and related effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No.~50671048).

Cite this article:

Qi Xian-Jin(祁先进), Wang Yin-Gang(王寅岗), Zhou Guang-Hong(周广宏), Li Zi-Quan(李子全), and Guo Min(郭敏) Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer 2010 Chin. Phys. B 19 037503

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Thermal relaxation of exchange bias field in an exchange coupled CoFe/IrMn bilayer

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