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Chin. Phys. B, 2010, Vol. 19(1): 017702    DOI: 10.1088/1674-1056/19/1/017702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

Yuan Jiea, Cao Mao-Shengb, Song Wei-Lib, HouZhi-Lingc
a School of Information Engineering, Central University for Nationalities, Beijing 100081, China; b School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China; c School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;School of Science, Beijing University of Chemical Technology, Beijing 100029, China
Abstract  This paper reports that single-phase γ -Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ -Y2Si2O7 as a function of the temperature and frequency. The γ -Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400~℃C in the range of 7.3--18~GHz. The mechanism for polarization relaxation of the as-prepared γ -Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.
Keywords:  γ-Y2Si2O7      low dielectric loss      dielectric properties      structural relaxation polarization  
Received:  31 December 2008      Revised:  05 June 2009      Published:  15 January 2010
PACS:  77.22.Gm (Dielectric loss and relaxation)  
  77.22.Ej (Polarization and depolarization)  
  81.20.Fw (Sol-gel processing, precipitation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50872159) and the National Defense Pre-research Foundation of China (Grant Nos. 513180303 and A2220061080).

Cite this article: 

HouZhi-Ling, Cao Mao-Sheng, Yuan Jie, Song Wei-Li Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7 2010 Chin. Phys. B 19 017702

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