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Chin. Phys. B, 2010, Vol. 19(1): 017702    DOI: 10.1088/1674-1056/19/1/017702

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

Yuan Jiea, Cao Mao-Shengb, Song Wei-Lib, HouZhi-Lingc
a School of Information Engineering, Central University for Nationalities, Beijing 100081, China; b School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China; c School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;School of Science, Beijing University of Chemical Technology, Beijing 100029, China
Abstract  This paper reports that single-phase γ -Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ -Y2Si2O7 as a function of the temperature and frequency. The γ -Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400~℃C in the range of 7.3--18~GHz. The mechanism for polarization relaxation of the as-prepared γ -Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.
Keywords:  γ-Y2Si2O7      low dielectric loss      dielectric properties      structural relaxation polarization  
Received:  31 December 2008      Revised:  05 June 2009      Published:  15 January 2010
PACS:  77.22.Gm (Dielectric loss and relaxation)  
  77.22.Ej (Polarization and depolarization)  
  81.20.Fw (Sol-gel processing, precipitation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50872159) and the National Defense Pre-research Foundation of China (Grant Nos. 513180303 and A2220061080).

Cite this article: 

HouZhi-Ling, Cao Mao-Sheng, Yuan Jie, Song Wei-Li Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7 2010 Chin. Phys. B 19 017702

[1] Schmittrink S, Varma C M and Levi A F J 1991 Phys. Rev. Lett. 66 2782
[2] Shin S H, Jeon, D Y and Suh K S 2001 Jpn. J. Appl. Phys. Part 1 40 4715
[3] Bottger T, Sun Y, Reinemer G J and Cone R L 2001 J. Lumin. 94&95 565
[4] Zhou P, Yu X , Yang L, Yang S and Gao W 2007 J. Lumin. 124 241
[5] MacLaren I, Trusty P A and Ponton C B 1999 Acta. Mater. 47 779
[6] Kahlenberg V, Kaindl R and Konzett J 2007 Solid State Sci. 9 542
[7] Kumar S and Drummond C H 1992 J. Mater. Res. 7 997
[8] Clarke D R and Thomas G 1978 J. Am. Ceram. Soc. 61 114
[9] Choi H J, Lee J G and Kim Y W 1997 J. Mater. Sci. 32 1937
[10] Hong Z L , Yoshida H, Ikuhara Y, Nishimura T and Mitomo M 2002 J. Eur. Ceram. Soc. 22 527
[11] Chen J, Rulis P, Ouyang L, Misra A and Ching W Y 2005 Phys. Rev. Lett. 95 256103
[12] Ching W Y, Ouyang L Z and Xu Y N 2003 Phys. Rev. B 67 245108
[13] Fukuda K and Matrubara H 2004 J. Am. Ceram. Soc. 87 89
[14] Sun Z Q, Zhou Y C, Wang J Y and Li M S 2007 J. Am. Ceram. Soc. 90 2535
[15] Wang X J, Gong Z Q, Qian Y F, Zhu J and Chen X B 2007 Chin. Phys. 16 2131
[16] Sharma M, Resta R, Car R 2007 Phys. Rev. Lett. 98 247401
[17] Kang Y Q, Cao M S, Yuan J and Shi X L 2009 Mater. Lett. 63 1344
[18] Cao M S, Shi X L, Fang X Y, Jin H B, Hou Z L and Zhou W 2007 Appl. Phys. Lett. 91 203110
[19] Wang G S, Deng Y, Xiang Y and Guo L 2008 Adv. Funct. Mater. 18 2584
[20] Guo J Y, Chen H, Li H Q and Zhang Y W 2008 Chin. Phys. B 17 2544
[21] Cao M S, Jin H B, Li J G, Zhang L, Xu Q, Li X and Xiong L T 2007 Key Engin. Mater. 336-338 1239
[22] Gao S J and Ouyang S X 2003 Acta Phys. Sin. 52 1292 (in Chinese)
[23] Chang F G, Fang K, Song G L and Wang Z K 2007 Acta Phys. Sin. 56 6068 (in Chinese)
[24] Zhang L, Jin H B and Cao M S 2007 Rare. Metal. Mat. Eng. 36 515 (in Chinese)
[25] Hou Z L, Zhang L, Yuan J, Song W L and Cao M S 2008 Chin. Phys. Lett. 25 2249
[26] Chen X L, Cheng Y H, Wu K and Xie X J 2007 J. Phys. D: Appl. Phys. 40 6034
[27] Chen X L, Cheng Y H, Xie X J, Feng W and Wu K 2007 J. Phys. D: Appl. Phys. 40 846
[28] Hou Z L, Cao M S, Yuan J, Fang X Y and Shi X L 2009 J. Appl. Phys. 105 076103
[29] Dube D C, Agrawal D, Agrawal S and Roy R 2007 Appl. Phys. Lett. 90 124105
[30] Shi X L, Cao M S, Fang X Y, Yuan J, Kang Y Q and Song W L 2008 Appl. Phys. Lett. 93 223112
[31] Cao M S, Hou Z L, Shi X L and Wang F C 2007 High. Technol. Lett. 13 279
[32] Cao M S, Hou Z L, Yuan J, Xiong L T and Shi X L 2009 J. Appl. Phys. 105 106102
[33] Wang J Y, Zhou Y C and Lin Z J 2007 Acta Mater. 55 6019
[34] Daniel V V 1967 Dielectric Relaxation (New York: Academic Press)
[35] Liu S H, Liu J M and Deng X L 2007 Electromagnetic Shielding and Absorbing Materials (Beijing: Chemical Industry Press) p132 (in Chinese)
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