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Chin. Phys., 2000, Vol. 9(4): 309-312    DOI: 10.1088/1009-1963/9/4/011
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Chu Jun-haoa, Liao Xian-bob, Kong Guang-linb, Ma Zhi-xunc
a National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; b State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China; c State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Acad
Abstract  The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.
Received:  18 July 1999      Published:  12 June 2005
PACS:  78.30.Ly (Disordered solids)  
  78.55.Qr (Amorphous materials; glasses and other disordered solids)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.40.Gh (Other heat and thermomechanical treatments)  

Cite this article: 

Chu Jun-hao, Liao Xian-bo, Kong Guang-lin, Ma Zhi-xun MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION 2000 Chin. Phys. 9 309

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