Light induced microstructure transformation in a-Si:H films
Liu Guo-Han(刘国汉)a)b), Ding Yi(丁毅)a), Zhang Wen-Li(张文理)c), Chen Guang-Hua(陈光华)c)†, He De-Yan(贺德衍)a), and Deng Jin-Xiang(邓金祥)c)
a School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; b Institute of Sensor Technology, Gansu Academy of Sciences, Lanzhou 730000, China; c The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100022, China
Abstract A series of a-Si:H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition (HW-MWECR-CVD), subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared (FTIR) spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.
Received: 23 May 2006
Revised: 24 August 2006
Accepted manuscript online:
Fund: Project supported by the National Basic Research Program of China (Grant No G2000028201).
Cite this article:
Liu Guo-Han(刘国汉), Ding Yi(丁毅), Zhang Wen-Li(张文理), Chen Guang-Hua(陈光华), He De-Yan(贺德衍), and Deng Jin-Xiang(邓金祥) Light induced microstructure transformation in a-Si:H films 2007 Chinese Physics 16 1125
Study on stability of hydrogenated amorphous silicon films Zhu Xiu-Hong (朱秀红), Chen Guang-Hua (陈光华), Zhang Wen-Li (张文理), Ding Yi (丁毅), Ma Zhan-Jie (马占洁), Hu Yue-Hui (胡跃辉), He Bin (何斌), Rong Yan-Dong (荣延栋). Chin. Phys. B, 2005, 14(11): 2348-2351.
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