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Chin. Phys., 2007, Vol. 16(5): 1276-1279    DOI: 10.1088/1009-1963/16/5/018
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The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

Zhang Yi-Men, Zhou Yong-Hua, Zhang Yu-Ming
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,\\ Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract  In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300K to 900K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.
Keywords:  absorption coefficient      responsivity      response time      6H-Silicon carbide UV photodetector  
Received:  22 August 2006      Revised:  25 September 2006      Published:  20 May 2007
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
Fund: Project supported by the National Basic Research Program of China (Grant No 2002CB311904).

Cite this article: 

Zhang Yi-Men, Zhou Yong-Hua, Zhang Yu-Ming The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector 2007 Chin. Phys. 16 1276

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