Abstract A new on-line methodology is used to characterize the negative bias temperature instability (NBTI) without inherent recovery. Saturation drain voltage shift and mobility shift are extracted by ID-VD characterizations, which were measured before stress, and after every certain stress phase, using the proportional differential operator (PDO) method. The new on-line methodology avoids the mobility linearity assumption as compared with the previous on-the-fly method. It is found that both reaction--diffusion and charge-injection processes are important in NBTI effect under either DC or AC stress. A similar activation energy, 0.15 eV, occurred in both DC and AC NBTI processes. Also degradation rate factor is independent of temperature below 90℃ and sharply increases above it. The frequency dependence of NBTI degradation shows that NBTI degradation is independent of frequencies. The carrier tunnelling and reaction--diffusion mechanisms exist simultaneously in NBTI degradation of sub-micron pMOSFETs, and the carrier tunnelling dominates the earlier NBTI stage and the reaction--diffusion mechanism follows when the generation rate of traps caused by carrier tunnelling reaches its maximum.
Received: 27 March 2006
Revised: 02 June 2006
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the State Key Development Program for Basic Research of China (Grant No G2000-036503).
Cite this article:
Ji Zhi-Gang (纪志罡), Xu Ming-Zhen (许铭真), Tan Chang-Hua (谭长华) Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method 2006 Chinese Physics 15 2431
Recovery of PMOSFET NBTI under different conditions Cao Yan-Rong (曹艳荣), Yang Yi (杨毅), Cao Cheng (曹成), He Wen-Long (何文龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Chin. Phys. B, 2015, 24(9): 097304.
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