Abstract The effects of barium on electrical and dielectric properties of the SnO$_2$$\cdot$Co$_2$O$_3$$\cdot$Ta$_2$O$_5$ varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5k$\Omega\cdot$cm with an increase of BaCO$_3$ concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient ($\alpha=29.2$). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO$_{2}$-based varistors.
Received: 31 March 2004
Revised: 14 May 2004
Accepted manuscript online:
(Conductors, resistors (including thermistors, varistors, and photoresistors))
Fund: Project supported by the Natural Science Foundation of Shandong Province, China (Grant No Z2003F04).
Cite this article:
Wang Chun-Ming (王春明), Wang Jin-Feng (王矜奉), Wang Chun-Lei (王春雷), Chen Hong-Cun (陈洪存), Su Wen-Bin (苏文斌), Zang Guo-Zhong (臧国忠), Qi Peng (亓鹏), Zhao Ming-Lei (赵明磊), Ming Bao-Quan (明保全) Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors 2004 Chinese Physics 13 1936
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