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Chin. Phys. B, 2004, Vol. 13(11): 1936-1940    DOI: 10.1088/1009-1963/13/11/031

Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

Wang Chun-Ming, Wang Jin-Feng, Wang Chun-Lei, Chen Hong-Cun, Su Wen-Bin, Zang Guo-Zhong, Qi Peng, Zhao Ming-Lei, Ming Bao-Quan
School of Physics and Microelectronics, National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
Abstract  The effects of barium on electrical and dielectric properties of the SnO$_2$$\cdot$Co$_2$O$_3$$\cdot$Ta$_2$O$_5$ varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5k$\Omega\cdot$cm with an increase of BaCO$_3$ concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient ($\alpha=29.2$). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO$_{2}$-based varistors.
Keywords:  varistors      tin oxide      electrical and dielectric properties      barium carbonate  
Received:  31 March 2004      Revised:  14 May 2004      Accepted manuscript online: 
PACS:  77.22.Ch (Permittivity (dielectric function))  
  77.22.Jp (Dielectric breakdown and space-charge effects)  
  84.32.Ff (Conductors, resistors (including thermistors, varistors, and photoresistors))  
Fund: Project supported by the Natural Science Foundation of Shandong Province, China (Grant No Z2003F04).

Cite this article: 

Wang Chun-Ming, Wang Jin-Feng, Wang Chun-Lei, Chen Hong-Cun, Su Wen-Bin, Zang Guo-Zhong, Qi Peng, Zhao Ming-Lei, Ming Bao-Quan Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors 2004 Chin. Phys. B 13 1936

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