Other articles related with "turn-on":
78503 Siyu Deng(邓思宇), Dezun Liao(廖德尊), Jie Wei(魏杰), Cheng Zhang(张成),Tao Sun(孙涛), and Xiaorong Luo(罗小蓉)
  High-performance vertical GaN field-effect transistor with an integrated self-adapted channel diode for reverse conduction
    Chin. Phys. B   2023 Vol.32 (7): 78503-078503 [Abstract] (161) [HTML 0 KB] [PDF 1597 KB] (253)
58504 Kaizhe Jiang(蒋铠哲), Xiaodong Zhang(张孝冬), Chuan Tian(田川), Shengrong Zhang(张升荣),Liqiang Zheng(郑理强), Rongzhao He(赫荣钊), and Chong Shen(沈重)
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    Chin. Phys. B   2023 Vol.32 (5): 58504-058504 [Abstract] (217) [HTML 1 KB] [PDF 1406 KB] (314)
27302 Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海)
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    Chin. Phys. B   2023 Vol.32 (2): 27302-027302 [Abstract] (268) [HTML 0 KB] [PDF 726 KB] (181)
17306 Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇)
  Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure
    Chin. Phys. B   2023 Vol.32 (1): 17306-017306 [Abstract] (285) [HTML 0 KB] [PDF 1537 KB] (122)
127201 Qing Liu(刘青), Hong-Bin Pu(蒲红斌), Xi Wang(王曦)
  Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time
    Chin. Phys. B   2019 Vol.28 (12): 127201-127201 [Abstract] (667) [HTML 1 KB] [PDF 1162 KB] (191)
108502 Xi Wang(王曦), Hong-Bin Pu(蒲红斌), Qing Liu(刘青), Li-Qi An(安丽琪)
  Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile
    Chin. Phys. B   2018 Vol.27 (10): 108502-108502 [Abstract] (697) [HTML 1 KB] [PDF 741 KB] (153)
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