Other articles related with "semipolar":
27801 Sheng-Rui Xu(许晟瑞), Ying Zhao(赵颖), Ren-Yuan Jiang(蒋仁渊), Teng Jiang(姜腾), Ze-Yang Ren(任泽阳), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
  Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
    Chin. Phys. B   2017 Vol.26 (2): 27801-027801 [Abstract] (800) [HTML 1 KB] [PDF 2722 KB] (314)
118102 Chen Long (陈龙), Payne Justin (裴嘉鼎), Strate Jan (史达特), Li Cheng (李成), Zhang Jian-Ming (张建明), Yu Wen-Jie (俞文杰), Di Zeng-Feng (狄增峰), Wang Xi (王曦)
  Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates
    Chin. Phys. B   2015 Vol.24 (11): 118102-118102 [Abstract] (670) [HTML 1 KB] [PDF 1912 KB] (498)
57801 Liu Jian-Ming (刘建明), Zhang Jie (张洁), Lin Wen-Yu (林文禹), Ye Meng-Xin (叶孟欣), Feng Xiang-Xu (冯向旭), Zhang Dong-Yan (张东炎), Steve Ding, Xu Chen-Ke (徐宸科), Liu Bao-Lin (刘宝林)
  Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates
    Chin. Phys. B   2015 Vol.24 (5): 57801-057801 [Abstract] (817) [HTML 1 KB] [PDF 964 KB] (552)
67803 Zhou Xiao-Wei(周小伟), Xu Sheng-Rui(许晟瑞), Zhang Jin-Cheng(张进成), Dang Ji-Yuan(党纪源), LŰ Ling(吕玲), Hao Yue(郝跃), and Guo Li-Xin(郭立新)
  Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization
    Chin. Phys. B   2012 Vol.21 (6): 67803-067803 [Abstract] (1448) [HTML 1 KB] [PDF 178 KB] (1154)
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