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Other articles related with "self-heating effect"：
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98501 |
Yi-Fan Li(李逸帆), Tao Ni(倪涛), Xiao-Jing Li(李晓静), Juan-Juan Wang(王娟娟), Lin-Chun Gao(高林春), Jian-Hui Bu(卜建辉), Duo-Li Li(李多力), Xiao-Wu Cai(蔡小五), Li-Da Xu(许立达), Xue-Qin Li(李雪勤), Run-Jian Wang(王润坚), Chuan-Bin Zeng(曾传滨), Bo Li(李博), Fa-Zhan Zhao(赵发展), Jia-Jun Luo(罗家俊), and Zheng-Sheng Han(韩郑生) |
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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process |
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Chin. Phys. B
2023 Vol.32 (9): 98501-098501
[Abstract]
(145)
[HTML 0 KB]
[PDF 2406 KB]
(24)
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17303 |
Dong Zhang(张东), Chenfei Wu(武辰飞), Weizong Xu(徐尉宗), Fangfang Ren(任芳芳), Dong Zhou(周东), Peng Yu(于芃), Rong Zhang(张荣), Youdou Zheng(郑有炓), Hai Lu(陆海) |
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Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors |
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Chin. Phys. B
2019 Vol.28 (1): 17303-017303
[Abstract]
(758)
[HTML 1 KB]
[PDF 528 KB]
(208)
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124401 |
Qiang Fu(付强), Wan-Rong Zhang(张万荣), Dong-Yue Jin(金冬月), Yan-Xiao Zhao(赵彦晓), Xiao Wang(王肖) |
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A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT |
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Chin. Phys. B
2016 Vol.25 (12): 124401-124401
[Abstract]
(542)
[HTML 1 KB]
[PDF 1748 KB]
(267)
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47701 |
Zheng Zhi (郑直), Li Wei (李威), Li Ping (李平) |
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Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect |
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Chin. Phys. B
2013 Vol.22 (4): 47701-047701
[Abstract]
(825)
[HTML 1 KB]
[PDF 967 KB]
(804)
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77304 |
Wang Yuan-Gang(王元刚), Luo Xiao-Rong(罗小蓉), Ge Rui(葛锐), Wu Li-Juan(吴丽娟), Chen Xi（陈曦), Yao Guo-Liang(姚国亮), Lei Tian-Fei(雷天飞), Wang Qi(王琦), Fan Jie(范杰), and Hu Xia-Rong(胡夏融) |
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Compound buried layer SOI high voltage device with a step buried oxide |
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Chin. Phys. B
2011 Vol.20 (7): 77304-077304
[Abstract]
(1460)
[HTML 0 KB]
[PDF 1859 KB]
(861)
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27202 |
Zhang Guang-Chen(张光沉), Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生) |
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Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method |
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Chin. Phys. B
2011 Vol.20 (2): 27202-027202
[Abstract]
(1575)
[HTML 0 KB]
[PDF 1563 KB]
(1572)
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107101 |
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Luo Xiao-Rong(罗小蓉), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Partial-SOI high voltage P-channel LDMOS with interface accumulation holes |
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Chin. Phys. B
2011 Vol.20 (10): 107101-107101
[Abstract]
(1648)
[HTML 1 KB]
[PDF 376 KB]
(864)
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37303 |
Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Luo Xiao-Rong(罗小蓉) |
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A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device |
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Chin. Phys. B
2010 Vol.19 (3): 37303-037303
[Abstract]
(1772)
[HTML 1 KB]
[PDF 1758 KB]
(1260)
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127303 |
Liu Hong-Xia(刘红侠), Li Bin(李斌), Li Jin(李劲), Yuan Bo(袁博), and Hao Yue(郝跃) |
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Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET |
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Chin. Phys. B
2010 Vol.19 (12): 127303-127303
[Abstract]
(1584)
[HTML 1 KB]
[PDF 973 KB]
(851)
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4622 |
Cao Quan-Jun (曹全君), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明) |
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A new physics-based self-heating effect model for 4H-SiC MESFETs |
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Chin. Phys. B
2008 Vol.17 (12): 4622-4626
[Abstract]
(1513)
[HTML 1 KB]
[PDF 620 KB]
(656)
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