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Other articles related with "poly-Si"：
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128105 |
Dongli Zhang(张冬利), Mingxiang Wang(王明湘), and Huaisheng Wang(王槐生) |
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Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress |
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Chin. Phys. B
2022 Vol.31 (12): 128105-128105
[Abstract]
(251)
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[PDF 879 KB]
(177)
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97306 |
Yong-Liang Li(李永亮), Qiu-Xia Xu(徐秋霞), Wen-Wu Wang(王文武) |
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Key technologies for dual high-k and dual metal gate integration |
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Chin. Phys. B
2018 Vol.27 (9): 97306-097306
[Abstract]
(576)
[HTML 1 KB]
[PDF 1824 KB]
(162)
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16601 |
Dongli Zhang(张冬利), Mingxiang Wang(王明湘), Man Wong(王文), Hoi-Sing Kwok(郭海成) |
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Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel |
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Chin. Phys. B
2017 Vol.26 (1): 16601-016601
[Abstract]
(619)
[HTML 1 KB]
[PDF 1088 KB]
(380)
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118504 |
Libin Liu(刘立滨), Renrong Liang(梁仁荣), Bolin Shan(单柏霖), Jun Xu(许军), Jing Wang(王敬) |
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Technology demonstration of a novel poly-Si nanowire thin film transistor |
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Chin. Phys. B
2016 Vol.25 (11): 118504-118504
[Abstract]
(543)
[HTML 1 KB]
[PDF 1232 KB]
(735)
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105101 |
Li Juan (李娟), Luo Chong (罗翀), Meng Zhi-Guo (孟志国), Xiong Shao-Zhen (熊绍珍), Hoi Sing Kwok (郭海威) |
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The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film |
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Chin. Phys. B
2013 Vol.22 (10): 105101-105101
[Abstract]
(599)
[HTML 1 KB]
[PDF 286 KB]
(1056)
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24212 |
Qiu Chao (仇超), Sheng Zhen (盛振), Li Le (李乐), Albert Pang (彭树根), Wu Ai-Min (武爱民), Wang Xi (王曦), Zou Shi-Chang (邹世昌), Gan Fu-Wan (甘甫烷) |
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High efficiency grating couplers based on shared process with CMOS MOSFETs |
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Chin. Phys. B
2013 Vol.22 (2): 24212-024212
[Abstract]
(836)
[HTML 1 KB]
[PDF 274 KB]
(638)
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1237 |
Wu Chun-Ya(吴春亚), Li Xue-Dong(李学冬), Zhao Shu-Yun(赵淑云), Li Juan(李娟), Meng Zhi-Guo(孟志国), Xiong Shao-Zhen(熊绍珍), and Zhang Fang(张芳) |
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Solution-based metal induced crystallization of a-Si |
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Chin. Phys. B
2009 Vol.18 (3): 1237-1241
[Abstract]
(1008)
[HTML 1 KB]
[PDF 1045 KB]
(445)
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1339 |
Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英) |
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Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel |
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Chin. Phys. B
2006 Vol.15 (6): 1339-1345
[Abstract]
(1807)
[HTML 0 KB]
[PDF 294 KB]
(654)
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