Other articles related with "optoelectronic properties":
127301 Shanshan Chen(陈珊珊), Xinhao Zhang(张新昊), Guangcan Wang(王广灿), Shuo Chen(陈朔), Heqi Ma(马和奇), Tianyu Sun(孙天瑜), Baoyuan Man(满宝元), and Cheng Yang(杨诚)
  Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction
    Chin. Phys. B   2023 Vol.32 (12): 127301-127301 [Abstract] (134) [HTML 0 KB] [PDF 2738 KB] (35)
87801 Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳)
  Achieving high-performance multilayer MoSe2 photodetectors by defect engineering
    Chin. Phys. B   2021 Vol.30 (8): 87801-087801 [Abstract] (398) [HTML 1 KB] [PDF 1009 KB] (74)
108401 Jingxiu Yang(杨竞秀), Peng Zhang(张鹏), Jianping Wang(王建平), and Su-Huai Wei(魏苏淮)†
  Theoretical investigation of halide perovskites for solar cell and optoelectronic applications
    Chin. Phys. B   2020 Vol.29 (10): 108401- [Abstract] (739) [HTML 1 KB] [PDF 4740 KB] (415)
66201 Yi-Fang Yuan(袁亦方), Zhi-Tao Zhang(张志涛), Wei-Ke Wang(王伟科), Yong-Hui Zhou(周永惠), Xu-Liang Chen(陈绪亮), Chao An(安超), Ran-Ran Zhang(张冉冉), Ying Zhou(周颖), Chuan-Chuan Gu(顾川川), Liang Li(李亮), Xin-Jian Li(李新建), Zhao-Rong Yang(杨昭荣)
  Pressure-induced enhancement of optoelectronic properties in PtS2
    Chin. Phys. B   2018 Vol.27 (6): 66201-066201 [Abstract] (895) [HTML 1 KB] [PDF 964 KB] (287)
97102 H. A. Rahnamaye Aliabad
  Investigation of optoelectronic properties of pure and Co substituted α-Al2O3 by Hubbard and modified Becke-Johnson exchange potentials
    Chin. Phys. B   2015 Vol.24 (9): 97102-097102 [Abstract] (608) [HTML 1 KB] [PDF 956 KB] (549)
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