Other articles related with "negative differential resistance":
67301 Yong-Chun Zhao(赵永春), Ming-Xin Zhu(朱铭鑫), Sheng-Shi Li(李胜世), and Ping Li(李萍)
  Two-dimensional tetragonal ZnB: A nodalline semimetal with good transport properties
    Chin. Phys. B   2023 Vol.32 (6): 67301-067301 [Abstract] (214) [HTML 0 KB] [PDF 3061 KB] (101)
17302 Jing-Fen Zhao(赵敬芬), Hui Wang(王辉), Zai-Fa Yang(杨在发), Hui Gao(高慧), Hong-Xia Bu(歩红霞), and Xiao-Juan Yuan(袁晓娟)
  Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations
    Chin. Phys. B   2022 Vol.31 (1): 17302-017302 [Abstract] (394) [HTML 0 KB] [PDF 2155 KB] (84)
127301 Xiang-Peng Zhou(周祥鹏), Hai-Bing Qiu(邱海兵), Wen-Xian Yang(杨文献), Shu-Long Lu(陆书龙), Xue Zhang(张雪), Shan Jin(金山), Xue-Fei Li(李雪飞), Li-Feng Bian(边历峰), and Hua Qin(秦华)
  Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy
    Chin. Phys. B   2021 Vol.30 (12): 127301-127301 [Abstract] (585) [HTML 0 KB] [PDF 1807 KB] (87)
37104 Fangdong Tang(汤方栋), Qianheng Du(杜乾衡), Cedomir Petrovic, Wei Zhang(张威), Mingquan He(何明全), Liyuan Zhang(张立源)
  Negative differential resistance and quantum oscillations in FeSb2 with embedded antimony
    Chin. Phys. B   2019 Vol.28 (3): 37104-037104 [Abstract] (884) [HTML 1 KB] [PDF 1112 KB] (251)
108504 Hong Zhao(赵虹), Dan-Dan Peng(彭丹丹), Jun He(何军), Xin-Mei Li(李新梅), Meng-Qiu Long(龙孟秋)
  Effects of edge hydrogenation and Si doping on spin-dependent electronic transport properties of armchair boron-phosphorous nanoribbons
    Chin. Phys. B   2018 Vol.27 (10): 108504-108504 [Abstract] (614) [HTML 1 KB] [PDF 1350 KB] (254)
30701 Zhenzhen Zhang(张真真), Zhanglong Fu(符张龙), Xuguang Guo(郭旭光), Juncheng Cao(曹俊诚)
  4.3 THz quantum-well photodetectors with high detection sensitivity
    Chin. Phys. B   2018 Vol.27 (3): 30701-030701 [Abstract] (745) [HTML 1 KB] [PDF 609 KB] (253)
97401 Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌)
  Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures
    Chin. Phys. B   2017 Vol.26 (9): 97401-097401 [Abstract] (606) [HTML 1 KB] [PDF 1008 KB] (257)
57204 Wu De-Qi (武德起), Ding Wu-Chang (丁武昌), Yang Shan-Shan (杨姗姗), Jia Rui (贾锐), Jin Zhi (金智), Liu Xin-Yu (刘新宇)
  High performance oscillator with 2-mW output power at 300 GHz
    Chin. Phys. B   2014 Vol.23 (5): 57204-057204 [Abstract] (792) [HTML 1 KB] [PDF 1002 KB] (448)
97301 Chen Ling-Na(陈灵娜), Ma Song-Shan(马松山), Ouyang Fang-Ping(欧阳方平), Wu Xiao-Zan(伍小赞), Xiao Jin(肖金), and Xu Hui(徐慧)
  Negative differential resistance behaviour in N-doped crossed graphene nanoribbons
    Chin. Phys. B   2010 Vol.19 (9): 97301-097301 [Abstract] (1631) [HTML 1 KB] [PDF 1991 KB] (1285)
1560 Zhang Xiao-Xin (张晓昕), Zeng Yi-Ping (曾一平), Wang Xiao-Guang (王晓光), Wang Bao-Qiang (王保强), Zhu Zhan-Ping (朱占平)
  Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes
    Chin. Phys. B   2004 Vol.13 (9): 1560-1563 [Abstract] (1132) [HTML 1 KB] [PDF 171 KB] (718)
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