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Other articles related with "failure current"：
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38501 |
Zi-Jie Zhou(周子杰), Xiang-Liang Jin(金湘亮), Yang Wang(汪洋), and Peng Dong(董鹏) |
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New DDSCR structure with high holding voltage for robust ESD applications |
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Chin. Phys. B
2021 Vol.30 (3): 38501-
[Abstract]
(446)
[HTML 1 KB]
[PDF 1487 KB]
(82)
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108501 |
Jie-Yu Li(李婕妤), Yang Wang(汪洋)†, Dan-Dan Jia(夹丹丹), Wei-Peng Wei(魏伟鹏), and Peng Dong(董鹏) |
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New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications |
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Chin. Phys. B
2020 Vol.29 (10): 108501-
[Abstract]
(454)
[HTML 1 KB]
[PDF 9554 KB]
(113)
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98502 |
Wenqiang Song(宋文强), Fei Hou(侯飞), Feibo Du(杜飞波), Zhiwei Liu(刘志伟), Juin J. Liou(刘俊杰) |
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Enhanced gated-diode-triggered silicon-controlled rectifier for robust electrostatic discharge (ESD) protection applications |
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Chin. Phys. B
2020 Vol.29 (9): 98502-098502
[Abstract]
(861)
[HTML 0 KB]
[PDF 1050 KB]
(168)
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88501 |
Fei Hou(侯飞), Ruibo Chen(陈瑞博), Feibo Du(杜飞波), Jizhi Liu(刘继芝), Zhiwei Liu(刘志伟), Juin J Liou(刘俊杰) |
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Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process |
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Chin. Phys. B
2019 Vol.28 (8): 88501-088501
[Abstract]
(734)
[HTML 1 KB]
[PDF 1117 KB]
(259)
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77304 |
Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波) |
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High holding voltage SCR for robust electrostatic discharge protection |
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Chin. Phys. B
2017 Vol.26 (7): 77304-077304
[Abstract]
(733)
[HTML 1 KB]
[PDF 1057 KB]
(434)
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