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Other articles related with "back gate"：
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38501 |
Zi-Jie Zhou(周子杰), Xiang-Liang Jin(金湘亮), Yang Wang(汪洋), and Peng Dong(董鹏) |
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New DDSCR structure with high holding voltage for robust ESD applications |
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Chin. Phys. B
2021 Vol.30 (3): 38501-
[Abstract]
(425)
[HTML 1 KB]
[PDF 1487 KB]
(75)
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47305 |
Fan-Yu Liu(刘凡宇), Heng-Zhu Liu(刘衡竹), Bi-Wei Liu(刘必慰), Yu-Feng Guo(郭宇峰) |
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An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect |
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Chin. Phys. B
2016 Vol.25 (4): 47305-047305
[Abstract]
(700)
[HTML 1 KB]
[PDF 663 KB]
(620)
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88501 |
Lü Kai (吕凯), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), He Wei-Wei (何伟伟), Huang Jian-Qiang (黄建强), Chai Zhan (柴展), Wang Xi (王曦) |
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Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs |
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Chin. Phys. B
2015 Vol.24 (8): 88501-088501
[Abstract]
(565)
[HTML 1 KB]
[PDF 291 KB]
(387)
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56602 |
Luo Jie-Xin(罗杰馨), Chen Jing(陈静), Zhou Jian-Hua(周建华), Wu Qing-Qing(伍青青), Chai Zhan(柴展), Yu Tao(余涛), and Wang Xi(王曦) |
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Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs |
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Chin. Phys. B
2012 Vol.21 (5): 56602-056602
[Abstract]
(1420)
[HTML 1 KB]
[PDF 268 KB]
(762)
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18501 |
Zhao Yuan-Yuan(赵远远), Qiao Ming(乔明), Wang Wei-Bin(王伟宾), Wang Meng(王猛), and Zhang Bo(张波) |
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The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure |
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Chin. Phys. B
2012 Vol.21 (1): 18501-018501
[Abstract]
(1193)
[HTML 1 KB]
[PDF 410 KB]
(1010)
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