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Other articles related with "Schottky barrier height"：
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87101 |
Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉) |
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Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain |
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Chin. Phys. B
2022 Vol.31 (8): 87101-087101
[Abstract]
(381)
[HTML 0 KB]
[PDF 4396 KB]
(112)
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117303 |
Hao Yuan(袁昊), Qing-Wen Song(宋庆文), Chao Han(韩超), Xiao-Yan Tang(汤晓燕), Xiao-Ning He(何晓宁), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门) |
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Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure |
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Chin. Phys. B
2019 Vol.28 (11): 117303-117303
[Abstract]
(691)
[HTML 1 KB]
[PDF 594 KB]
(143)
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27303 |
Jin-Lan Li(李金岚), Yun Li(李赟), Ling Wang(汪玲), Yue Xu(徐跃), Feng Yan(闫锋), Ping Han(韩平), Xiao-Li Ji(纪小丽) |
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Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode |
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Chin. Phys. B
2019 Vol.28 (2): 27303-027303
[Abstract]
(785)
[HTML 1 KB]
[PDF 929 KB]
(311)
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27304 |
Gui-fang Li(李桂芳), Jing Hu(胡晶), Hui Lv(吕辉), Zhijun Cui(崔智军), Xiaowei Hou(候晓伟), Shibin Liu(刘诗斌), Yongqian Du(杜永乾) |
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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene/n-Ge junction |
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Chin. Phys. B
2016 Vol.25 (2): 27304-027304
[Abstract]
(631)
[HTML 1 KB]
[PDF 689 KB]
(510)
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77306 |
Wei Jiang-Bin (魏江镔), Chi Xiao-Wei (池晓伟), Lu Chao (陆超), Wang Chen (王尘), Lin Guang-Yang (林光杨), Wu Huan-Da (吴焕达), Huang Wei (黄巍), Li Cheng (李成), Chen Song-Yan (陈松岩), Liu Chun-Li (刘春莉) |
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Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride |
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Chin. Phys. B
2015 Vol.24 (7): 77306-077306
[Abstract]
(718)
[HTML 1 KB]
[PDF 340 KB]
(371)
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27101 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) |
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27101-027101
[Abstract]
(703)
[HTML 1 KB]
[PDF 268 KB]
(736)
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5029 |
Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志) |
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High-temperature current conduction through three kinds of Schottky diodes |
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Chin. Phys. B
2009 Vol.18 (11): 5029-5033
[Abstract]
(1639)
[HTML 1 KB]
[PDF 712 KB]
(729)
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4465 |
An Xia(安霞), Fan Chun-Hui(范春晖), Huang Ru(黄如), Guo Yue(郭岳), Xu Cong(徐聪), Zhang Xing(张兴), and Wang Yang-Yuan(王阳元) |
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The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique |
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Chin. Phys. B
2009 Vol.18 (10): 4465-4469
[Abstract]
(1726)
[HTML 1 KB]
[PDF 5296 KB]
(831)
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156 |
Zhu Shi-Yang (竺士炀), Ru Guo-Ping (茹国平), Qu Xin-Ping (屈新萍), Li Bing-Zong (李炳宗), R.L.Van Meirhaeghe, C.Detavernier, F.Cardon |
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Double threshold behaviour of I--V characteristics of CoSi2/Si Schottky contacts |
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Chin. Phys. B
2002 Vol.11 (2): 156-162
[Abstract]
(1196)
[HTML 1 KB]
[PDF 297 KB]
(534)
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