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Other articles related with "MIS-HEMT"：
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57302 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Ang Li(李昂), Kai Liu(刘凯), Yun-Long He(何云龙), Xiao-Li Lu(陆小力) and Yue Hao(郝跃) |
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Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT |
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Chin. Phys. B
2021 Vol.30 (5): 57302-057302
[Abstract]
(618)
[HTML 1 KB]
[PDF 977 KB]
(164)
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127101 |
Meihua Liu(刘美华), Zhangwei Huang(黄樟伟), Kuan-Chang Chang(张冠张), Xinnan Lin(林信南), Lei Li(李蕾), and Yufeng Jin(金玉丰) |
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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology |
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Chin. Phys. B
2020 Vol.29 (12): 127101-
[Abstract]
(396)
[HTML 1 KB]
[PDF 1236 KB]
(53)
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107201 |
Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Qiu-Ling Qiu(丘秋凌), Liu-An Li(李柳暗), Liang He(何亮), Jin-Wei Zhang(张津玮), Chen-Liang Feng(冯辰亮), Zhen-Xing Liu(刘振兴), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Yun-Liang Rao(饶运良), Zhi-Yuan He(贺致远), and Yang Liu (刘扬)† |
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Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (10): 107201-
[Abstract]
(646)
[HTML 1 KB]
[PDF 1171 KB]
(120)
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87304 |
Yao-Peng Zhao(赵垚澎), Chong Wang(王冲), Xue-Feng Zheng(郑雪峰), Xiao-Hua Ma(马晓华), Kai Liu(刘凯), Ang Li(李昂), Yun-Long He(何云龙), Yue Hao(郝跃) |
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Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators |
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Chin. Phys. B
2020 Vol.29 (8): 87304-087304
[Abstract]
(598)
[HTML 0 KB]
[PDF 1089 KB]
(122)
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67203 |
Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (6): 67203-067203
[Abstract]
(642)
[HTML 1 KB]
[PDF 770 KB]
(154)
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47304 |
Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃) |
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Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs |
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Chin. Phys. B
2020 Vol.29 (4): 47304-047304
[Abstract]
(607)
[HTML 1 KB]
[PDF 753 KB]
(174)
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37201 |
Tao-Tao Que(阙陶陶), Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Liang He(何亮), Qiu-Ling Qiu(丘秋凌), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬) |
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Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric |
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Chin. Phys. B
2020 Vol.29 (3): 37201-037201
[Abstract]
(629)
[HTML 1 KB]
[PDF 1180 KB]
(158)
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27304 |
Ma Xiao-Hua(马晓华), Pan Cai-Yuan(潘才渊), Yang Li-Yuan(杨丽媛), Yu Hui-You(于惠游), Yang Ling(杨凌), Quan Si(全思), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths |
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Chin. Phys. B
2011 Vol.20 (2): 27304-027304
[Abstract]
(1372)
[HTML 1 KB]
[PDF 662 KB]
(1389)
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77303 |
Bi Zhi-Wei(毕志伟), Feng Qian(冯倩), Hao Yue(郝跃), Wang Dang-Hui(王党会), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Quan Si(全思), and Xu Sheng-Rui(许晟瑞) |
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AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition |
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Chin. Phys. B
2010 Vol.19 (7): 77303-077303
[Abstract]
(1722)
[HTML 0 KB]
[PDF 662 KB]
(869)
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