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Other articles related with "FinFET"：
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77302 |
Hao-Yan Liu(刘昊炎), Yong-Liang Li(李永亮), and Wen-Wu Wang(王文武) |
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Narrowed Si0.7Ge0.3 channel FinFET with subthreshold swing of 64 mV/Dec using cyclic self-limited oxidation and removal process |
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Chin. Phys. B
2023 Vol.32 (7): 77302-077302
[Abstract]
(145)
[HTML 1 KB]
[PDF 776 KB]
(20)
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46101 |
Li Cai(蔡莉), Ya-Qing Chi(池雅庆), Bing Ye(叶兵), Yu-Zhu Liu(刘郁竹), Ze He(贺泽), Hai-Bin Wang(王海滨), Qian Sun(孙乾), Rui-Qi Sun(孙瑞琪), Shuai Gao(高帅), Pei-Pei Hu(胡培培), Xiao-Yu Yan(闫晓宇), Zong-Zhen Li(李宗臻), and Jie Liu(刘杰) |
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Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains |
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Chin. Phys. B
2023 Vol.32 (4): 46101-046101
[Abstract]
(184)
[HTML 0 KB]
[PDF 1700 KB]
(82)
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126103 |
Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌) |
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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs |
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Chin. Phys. B
2022 Vol.31 (12): 126103-126103
[Abstract]
(308)
[HTML 0 KB]
[PDF 2300 KB]
(61)
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56106 |
Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰) |
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Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology |
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Chin. Phys. B
2022 Vol.31 (5): 56106-056106
[Abstract]
(411)
[HTML 1 KB]
[PDF 2993 KB]
(131)
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17301 |
Ren-Ren Xu(徐忍忍), Qing-Zhu Zhang(张青竹), Long-Da Zhou(周龙达), Hong Yang(杨红), Tian-Yang Gai(盖天洋), Hua-Xiang Yin(殷华湘), and Wen-Wu Wang(王文武) |
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Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices |
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Chin. Phys. B
2022 Vol.31 (1): 17301-017301
[Abstract]
(474)
[HTML 1 KB]
[PDF 975 KB]
(194)
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128501 |
Dan-Yang Chen(陈丹旸), Jin-Shun Bi(毕津顺), Kai Xi(习凯), and Gang Wang(王刚) |
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PBTI stress-induced 1/ f noise in n-channel FinFET |
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Chin. Phys. B
2020 Vol.29 (12): 128501-
[Abstract]
(450)
[HTML 1 KB]
[PDF 1174 KB]
(32)
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87303 |
Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武) |
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High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing |
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Chin. Phys. B
2020 Vol.29 (8): 87303-087303
[Abstract]
(549)
[HTML 0 KB]
[PDF 2270 KB]
(90)
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97308 |
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Characteristics and threshold voltage model of GaN-based FinFET with recessed gate |
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Chin. Phys. B
2018 Vol.27 (9): 97308-097308
[Abstract]
(757)
[HTML 1 KB]
[PDF 804 KB]
(224)
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47307 |
Ting-Ting Liu(刘婷婷), Kai Zhang(张凯), Guang-Run Zhu(朱广润), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Xin-Xin Yu(郁鑫鑫), Tang-Sheng Chen(陈堂胜) |
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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs |
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Chin. Phys. B
2018 Vol.27 (4): 47307-047307
[Abstract]
(668)
[HTML 1 KB]
[PDF 799 KB]
(343)
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49401 |
Jun-Ting Yu(于俊庭), Shu-Ming Chen(陈书明), Jian-Jun Chen(陈建军), Peng-Cheng Huang(黄鹏程), Rui-Qiang Song(宋睿强) |
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Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process |
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Chin. Phys. B
2016 Vol.25 (4): 49401-049401
[Abstract]
(706)
[HTML 1 KB]
[PDF 461 KB]
(410)
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47305 |
Fan-Yu Liu(刘凡宇), Heng-Zhu Liu(刘衡竹), Bi-Wei Liu(刘必慰), Yu-Feng Guo(郭宇峰) |
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An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect |
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Chin. Phys. B
2016 Vol.25 (4): 47305-047305
[Abstract]
(652)
[HTML 1 KB]
[PDF 663 KB]
(613)
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119401 |
Yu Jun-Ting (于俊庭), Chen Shu-Ming (陈书明), Chen Jian-Jun (陈建军), Huang Peng-Cheng (黄鹏程) |
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Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation |
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Chin. Phys. B
2015 Vol.24 (11): 119401-119401
[Abstract]
(642)
[HTML 1 KB]
[PDF 511 KB]
(586)
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117308 |
Wang Jun-Cheng (王骏成), Du Gang (杜刚), Wei Kang-Liang (魏康亮), Zhang Xing (张兴), Liu Xiao-Yan (刘晓彦 ) |
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Three-dimensional Monte Carlo simulation of bulk fin field effect transistor |
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Chin. Phys. B
2012 Vol.21 (11): 117308-117308
[Abstract]
(1036)
[HTML 1 KB]
[PDF 290 KB]
(1184)
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