Effect of oxygen on regulation of properties of moderately boron-doped diamond films
Dong-Yang Liu(刘东阳)1,2,†, Li-Cai Hao(郝礼才)1,3,†, Wei-Kang Zhao(赵伟康)1,3, Zi-Ang Chen(陈子昂)1,3, Kun Tang(汤琨)1,3,‡, Shun-Ming Zhu(朱顺明)1,3, Jian-Dong Ye(叶建东)1,3, Rong Zhang(张荣)1,3, You-Dou Zheng(郑有炓)1,3, and Shu-Lin Gu(顾书林)1,3,§
1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China; 2 The Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China; 3 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China
Abstract Regulation of oxygen on properties of moderately boron-doped diamond films is fully investigated. Results show that, with adding a small amount of oxygen (oxygen-to-carbon ratio < 5.0%), the crystal quality of diamond is improved, and a suppression effect of residual nitrogen is observed. With increasing ratio of O/C from 2.5% to 20.0%, the hole concentration is firstly increased then reduced. This change of hole concentration is also explained. Moreover, the results of Hall effect measurement with temperatures from 300 K to 825 K show that, with adding a small amount of oxygen, boron and oxygen complex structures (especially B3O and B4O) are formed and exhibit as shallow donor in diamond, which results in increase of donor concentration. With further increase of ratio of O/C, the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration (the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%). This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with oxygen. The technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration, which is applicable to electronic level of usage.
(Defects and impurities in crystals; microstructure)
Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFB0406502, 2017YFF0210800, and 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61775203, 61574075, 61974059, 61674077, and 91850112), the State Key Research and Development Project of Jiangsu, China (Grant No. BE2018115), State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices (Grant No. 2017KF001), and Anhui University Natural Science Research Project (Grant No. KJ2021A0037).
Corresponding Authors:
Kun Tang, Shu-Lin Gu
E-mail: ktang@nju.edu.cn;slgu@nju.edu.cn
Cite this article:
Dong-Yang Liu(刘东阳), Li-Cai Hao(郝礼才), Wei-Kang Zhao(赵伟康), Zi-Ang Chen(陈子昂), Kun Tang(汤琨), Shun-Ming Zhu(朱顺明), Jian-Dong Ye(叶建东), Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林) Effect of oxygen on regulation of properties of moderately boron-doped diamond films 2022 Chin. Phys. B 31 128104
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