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Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector |
Rongrong Guo(郭榕榕)†, Jinhai Lin(林金海), Lili Liu(刘莉莉), Shiwei Li(李世韦), Chen Wang(王尘), Feibin Xiong(熊飞兵), and Haijun Lin(林海军) |
1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China |
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Abstract \baselineskip=12.5pt plus.2pt minus.2pt The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse detectors. The influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software simulation. The sub-bandgap illumination with a wavelength of 890 nm and intensity of 8× 10 -8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe crystals. The simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination, thus space charge concentration can be reduced under the bias voltage of 500 V. A flat electric field distribution is obtained, which significantly improves the charge collection efficiency of the CdZnTe detector. Meanwhile, premised on the high resistivity of CdZnTe crystal, the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1× 10 -7 W/cm2 illumination. The electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.
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Received: 06 August 2020
Revised: 26 October 2020
Accepted manuscript online: 31 October 2020
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PACS:
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61.72.uj
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(III-V and II-VI semiconductors)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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85.25.Oj
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(Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge))
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78.56.Cd
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(Photocarrier radiometry)
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Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51702271 and 61904155) and the Natural Science Foundation of Fujian Province, China (Grant No. 2020J05239). |
Corresponding Authors:
†Corresponding author. E-mail: 2016000050@xmut.edu.cn
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Cite this article:
Rongrong Guo(郭榕榕, Jinhai Lin(林金海), Lili Liu(刘莉莉), Shiwei Li(李世韦), Chen Wang(王尘), Feibin Xiong(熊飞兵), and Haijun Lin(林海军) Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector 2021 Chin. Phys. B 30 036101
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1 Czyz S A, Farsoni A T and Gadey H R 2019 Nucl. Instrum. Methods Phys. Res. Sect. A 945 162614 2 Guo Q, Beilicke M, Garson A, Kislat F, Fleming D and Krawczynski H 2012 Astropart. Phys. 41 63 3 Johns P M and Nino J C 2019 J. Appl. Phys. 126 040902 4 Bolotnikov A E, Babalola S, Camarda G S, et al. 2011 IEEE Trans. Nucl. Sci. 58 1972 5 Cola A and Farella I 2013 Sensors (Basel) 13 9414 6 Musiienko A, Grill R, Pek\'arek J, Belas E, Praus P, Pipek J, D\vedi\vc V and Elhadidy H 2017 Appl. Phys. Lett. 111 082103 7 Mahmood S A 2019 J. Appl. Phys. 125 214505 8 Thomas B, Veale M C, Wilson M D, Seller P, Schneider A and Iniewski K 2017 J. Inst. 12 C12045 9 Alekseeva L, Dorogov P, Ivanov V, Loutchanski A, Grigorjeva L and Millers D 2012 IEEE Nuclear Science Symposium Conference Record, Valencia, Spain, 23-29, October, 2011, p. 4562 10 Washington A L, Teague L C, Duff M C, Burger A, Groza M and Buliga V 2011 J. Appl. Phys. 110 073708 11 Ellakany A A, Abouelatta M, Shaker A, Sayah G T and El-Banna M 2017 J. Eng. 2017 574 12 Maneuski D, Gostilo V and Owens A 2019 J. Phys. D: Appl. Phys. 53 015114 13 Das A,Duttagupta S P 2015 Radiat. Prot. Dosim. 167 443 14 Johannesson D, Nawaz M and Nee H P 2019 Mater. Sci. Forum. 963 670 15 Tang L G2014 Semiconductor process and device simulation software Silvaco TCAD practical tutorial (Beijing: Tsinghua University Press) p. 99 (in Chinese) 16 Prokesch M and Szeles C 2007 Phys. Rev. B 75 245204 17 Gul R, Roy U N and James R B 2017 J. Appl. Phys. 121 115701 18 Cola A, Farella I and Anni M 2012 IEEE Trans. Nucl. Sci. 59 4604 19 Montmorillon L A D, Delaye P, Launay J C and Roosen G 1995 Opt. Mater. 4 233 20 Wang N, Jie W Q, Xu L, Zha G Q and Wang T 2013 IEEE Nuclear Science Symposium and Medical Imaging Conference, 27 October-2 November, 2013, Seoul, South Korea, pp. 1-5 21 Zha G Q, Wang T, Xu Y D and Jie W Q 2013 Physics 42 862 (in Chinese) 22 http://www.silvaco.com/ 23 Marple D T F 1964 J. Appl. Phys. 35 539 24 Cheng Z, Delahoy A E, Su Z and Chin K K 2014 Thin Solid Films 558 391 25 Hsieh Y K and Card H C 1989 J. Appl. Phys. 65 2409 26 Matthew C Veale 2009 Charge Transport and Low Temperature Phenomena in Single Crystal CdZnTe (Guildford: University of Surrey) |
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