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Chin. Phys. B, 2016, Vol. 25(8): 087702    DOI: 10.1088/1674-1056/25/8/087702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes

Zheng-Hu Zuo(左正笏)1,2, Qing-Feng Zhan(詹清峰)1,2, Bin Chen(陈斌)1,2, Hua-Li Yang(杨华礼)1,2, Yi-Wei Liu(刘宜伟)1,2, Lu-Ping Liu(刘鲁萍)1,2, Ya-Li Xie(谢亚丽)1,2, Run-Wei Li(李润伟)1,2
1 Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
2 Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Abstract  

Free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm3 and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm3 and 67.9%, respectively.

Keywords:  antiferroelectric films      freestanding      energy storage  
Received:  23 February 2016      Revised:  11 April 2016      Accepted manuscript online: 
PACS:  77.80.-e (Ferroelectricity and antiferroelectricity)  
  68.55.-a (Thin film structure and morphology)  
  84.60.Ve (Energy storage systems, including capacitor banks)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 11374312, 51401230, and 51522105) and the Fund for Ningbo Municipal Science and Technology Innovation Team, China (Grant No. 2015B11001).

Corresponding Authors:  Run-Wei Li     E-mail:  zhanqf@nimte.ac.cn

Cite this article: 

Zheng-Hu Zuo(左正笏), Qing-Feng Zhan(詹清峰), Bin Chen(陈斌), Hua-Li Yang(杨华礼), Yi-Wei Liu(刘宜伟), Lu-Ping Liu(刘鲁萍), Ya-Li Xie(谢亚丽), Run-Wei Li(李润伟) Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes 2016 Chin. Phys. B 25 087702

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