Simulation of positron backscattering and implantation profiles using Geant4 code

doi:10.1088/1674-1056/24/10/107803

Abstract For the proper interpretation of the experimental data produced in slow positron beam technique, the positron implantation properties are studied carefully using the latest Geant4 code. The simulated backscattering coefficients, the implantation profiles, and the median implantation depths for mono-energetic positrons with energy range from 1 keV to 50 keV normally incident on different crystals are reported. Compared with the previous experimental results, our simulation backscattering coefficients are in reasonable agreement, and we think that the accuracy may be related to the structures of the host materials in the Geant4 code. Based on the reasonable simulated backscattering coefficients, the adjustable parameters of the implantation profiles which are dependent on materials and implantation energies are obtained. The most important point is that we calculate the positron backscattering coefficients and median implantation depths in amorphous polymers for the first time and our simulations are in fairly good agreement with the previous experimental results.

Keywords: positron beam backscattering coefficient implantation profile Geant4

Received: 17 April 2015
Revised: 07 July 2015
Accepted manuscript online:

PACS:	78.70.-g	(Interactions of particles and radiation with matter)
	78.70.Bj	(Positron annihilation)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11175171 and 11105139).

Corresponding Authors: Ye Bang-Jiao
E-mail: bjye@ustc.edu.cn

Cite this article:

Huang Shi-Juan (黄世娟), Pan Zi-Wen (潘子文), Liu Jian-Dang (刘建党), Han Rong-Dian (韩荣典), Ye Bang-Jiao (叶邦角) Simulation of positron backscattering and implantation profiles using Geant4 code 2015 Chin. Phys. B 24 107803

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Simulation of positron backscattering and implantation profiles using Geant4 code

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