| CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor |
| Li Rui (李睿), Guo Chun-Sheng (郭春生), Feng Shi-Wei (冯士维), Shi Lei (石磊), Zhu Hui (朱慧), Wang Lin (王琳) |
| College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing m 100124, China |
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Abstract To obtain thermal contact resistance (TCR) between the vertical double-diffused metal-oxide-semiconductor (VDMOS) and the heat sink, we derived the relationship between the total thermal resistance and the contact force imposed on the VDMOS. The total thermal resistance from the chip to the heat sink is measured under different contact forces, and the TCR can be extracted nondestructively from the derived relationship. Finally, the experimental results are compared with the simulation results.
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Received: 09 September 2014
Revised: 02 February 2015
Accepted manuscript online:
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PACS:
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66.70.-f
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(Nonelectronic thermal conduction and heat-pulse propagation in solids;thermal waves)
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68.60.Wm
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(Other nonelectronic physical properties)
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72.15.Cz
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(Electrical and thermal conduction in amorphous and liquid metals and Alloys ?)
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84.30.Jc
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(Power electronics; power supply circuits)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61204081). |
Corresponding Authors:
Guo Chun-Sheng
E-mail: guocs@bjut.edu.cn
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Cite this article:
Li Rui (李睿), Guo Chun-Sheng (郭春生), Feng Shi-Wei (冯士维), Shi Lei (石磊), Zhu Hui (朱慧), Wang Lin (王琳) Nondestructive measurement of thermal contact resistance for the power vertical double-diffused metal-oxide-semiconductor 2015 Chin. Phys. B 24 076601
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