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Precursor evolution and growth mechanism of BTO/YBCO films by TFA-MOD process |
Wang Hong-Yan (王洪艳)a b, Ding Fa-Zhu (丁发柱)a, Gu Hong-Wei (古宏伟)a, Zhang Teng (张腾)a, Peng Xing-Yu (彭星煜)a b |
a Key Laboratory of Applied Superconductivity, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;
b University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract In this study, BaTiO3 (BTO)-doped YBCO films are prepared on LaAlO3 (100) single-crystal substrates by metal-organic decomposition (MOD) using trifluoroacetate (TFA) precursor solutions. The critical current density (Jc) of BTO/YBCO film is as high as 10 MA/cm2 (77 K, 0 T). The BTO peak is found in the X-ray diffraction (XRD) pattern of a final YBCO superconductivity film. Moreover, a comprehensive study of the precursor evolution is conducted mainly by X-ray analysis and μ-Raman spectroscopy. It is found that the TFA begins to decompose at the beginning of the thermal process, and then further decomposes as temperature increases, and at 700℃ BTO nanoparticles begin to appear. It suggests that the YBCO film embedded with BTO nanoparticles, whose critical current density (Jc) is enhanced, is successfully prepared by an easily scalable chemical solution deposition technique.
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Received: 18 February 2014
Revised: 08 April 2014
Accepted manuscript online:
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PACS:
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74.78.-w
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(Superconducting films and low-dimensional structures)
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81.16.Dn
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(Self-assembly)
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51002149 and 51272250) and the National Basic Research Program of China (Grant No. 2011CBA00105). |
Corresponding Authors:
Ding Fa-Zhu,Gu Hong-Wei
E-mail: dingfazhu@mail.iee.ac.cn;guhw@mail.iee.ac.cn
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About author: 74.78.-w; 81.16.Dn |
Cite this article:
Wang Hong-Yan (王洪艳), Ding Fa-Zhu (丁发柱), Gu Hong-Wei (古宏伟), Zhang Teng (张腾), Peng Xing-Yu (彭星煜) Precursor evolution and growth mechanism of BTO/YBCO films by TFA-MOD process 2014 Chin. Phys. B 23 107402
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