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Characterization of zirconium thin films deposited by pulsed laser deposition |
Liu Wei (刘伟), Wan Jing-Ping (万竟平), Cai Wu-Peng (蔡吴鹏), Liang Jian-Hua (梁建华), Zhou Xiao-Song (周晓松), Long Xing-Gui (龙兴贵) |
Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China |
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Abstract Zirconium (Zr) thin films deposited on Si (100) by pulsed laser deposition (PLD) at different pulse repetition rates are investigated. The deposited Zr films exhibit a polycrystalline structure, and the X-ray diffraction (XRD) patterns of the films show the α Zr phase. Due to the morphology variation of the target and the laser-plasma interaction, the deposition rate significantly decreases from 0.0431 Å/pulse at 2 Hz to 0.0189 Å/pulse at 20 Hz. The presence of droplets on the surface of the deposited film, which is one of the main disadvantages of the PLD, is observed at various pulse repetition rates. Statistical results show that the dimension and the density of the droplets increase with an increasing pulse repetition rate. We find that the source of droplets is the liquid layer formed under the target surface. The dense nanoparticles covered on the film surface are observed through atomic force microscopy (AFM). The root mean square (RMS) roughness caused by valleys and islands on the film surface initially increases and then decreases with the increasing pulse repetition rate. The results of our investigation will be useful to optimize the synthesis conditions of the Zr films.
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Received: 02 January 2014
Revised: 25 February 2014
Accepted manuscript online:
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PACS:
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81.15.Fg
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(Pulsed laser ablation deposition)
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61.05.-a
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(Techniques for structure determination)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 91126001). |
Corresponding Authors:
Long Xing-Gui
E-mail: mengdejuli2017@sina.cn
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Cite this article:
Liu Wei (刘伟), Wan Jing-Ping (万竟平), Cai Wu-Peng (蔡吴鹏), Liang Jian-Hua (梁建华), Zhou Xiao-Song (周晓松), Long Xing-Gui (龙兴贵) Characterization of zirconium thin films deposited by pulsed laser deposition 2014 Chin. Phys. B 23 098103
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