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Chin. Phys. B, 2013, Vol. 22(10): 107901    DOI: 10.1088/1674-1056/22/10/107901
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates

Chen Lian-Lian (陈莲莲), Guo Li-Wei (郭丽伟), Liu Yu (刘宇), Li Zhi-Lin (李治林), Huang Jiao (黄郊), Lu Wei (芦伟)
Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  The field emission (FE) properties of vertically aligned graphene sheets (VAGSs) grown on different SiC substrates are reported. The VAGSs grown on nonpolar SiC (10-10) substrate show an ordered alignment with the graphene basal plane-parallel to each other, and show better FE features, with a lower turn-on field and a larger field enhancement factor. The VAGSs grown on polar SiC (000-1) substrate reveal a random petaloid-shaped arrangement and stable current emission over 8 hours with a maximum emission current fluctuation of only 4%. The reasons behind the differing FE characteristics of the VAGSs on different SiC substrates are analyzed and discussed.
Keywords:  field emission      vertically aligned graphene sheets      SiC substrate  
Received:  09 April 2012      Revised:  06 May 2013      Accepted manuscript online: 
PACS:  79.70.+q (Field emission, ionization, evaporation, and desorption)  
  61.48.Gh (Structure of graphene)  
Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2011CB932700) and the National Natural Science Foundation of China (Grant Nos. 51272279, 51072223, and 50972162).
Corresponding Authors:  Guo Li-Wei     E-mail:  lwguo@iphy.ac.cn

Cite this article: 

Chen Lian-Lian (陈莲莲), Guo Li-Wei (郭丽伟), Liu Yu (刘宇), Li Zhi-Lin (李治林), Huang Jiao (黄郊), Lu Wei (芦伟) A comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates 2013 Chin. Phys. B 22 107901

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