Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

doi:10.1088/1674-1056/20/6/068102

Abstract Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se₂ solar cell can reach a conversion efficiency of 13.15%.

Keywords: Mo film Cu(InGa)Se₂ back contact

Received: 26 October 2010
Revised: 09 December 2010
Accepted manuscript online:

PACS:	81.15.Cd	(Deposition by sputtering)
	61.10.Nz
	81.15.Ef

Cite this article:

Li Wei (李微), Zhao Yan-Min (赵彦民), Liu Xing-Jiang (刘兴江), Ao Jian-Ping (敖建平), Sun Yun (孙云) Thickness optimization of Mo films for Cu(InGa)Se₂ solar cell applications 2011 Chin. Phys. B 20 068102

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Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

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