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Simulation of dielectric resonator for high-Tc radio frequency superconducting quantum interference device |
Gao Ji(高吉), Yang Tao(杨涛), Ma Ping(马平)†, and Dai Yuan-Dong(戴远东) |
School of Physics and State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China |
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Abstract Nowadays, the high-critical-temperature radio frequency superconducting quantum interference device (high-$T_{\rm c }$ rf SQUID) is usually coupled to a dielectric resonator that is a standard $10\times 10\times 1$ mm3 SrTiO3 (STO) substrate with a YBa2Cu3O$_{7 - \delta}$ (YBCO) thin-film flux focuser deposited on it. Recently, we have simulated a dielectric resonator for the high-$T_{\rm c}$ rf SQUID by using the ANSOFT High Frequency Structure Simulator (ANSOFT HFSS). We simulate the resonant frequency and the quality factor of our dielectric resonator when it is unloaded or matches a 50-$\Omega$ impedance. The simulation results are quite close to the practical measurements. Our study shows that ANSOFT HFSS is quite suitable for simulating the dielectric resonator used for the high-Tc rf SQUID. Therefore, we think the ANSOFT HFSS can be very helpful for investigating the characteristics of dielectric resonators for high-Tc rf SQUIDs.
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Received: 10 November 2009
Accepted manuscript online:
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PACS:
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85.25.Dq
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(Superconducting quantum interference devices (SQUIDs))
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85.25.Am
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(Superconducting device characterization, design, and modeling)
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85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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74.62.-c
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(Transition temperature variations, phase diagrams)
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74.78.Bz
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Fund: Project supported by the National
Basic Research Program of China (Grant No.~2006CB601007), the
National Natural Science Foundation of China (Grant No.~10674006),
the National High Technology Research and Development Program of
China (Grant No.~2007AA03Z2 |
Cite this article:
Gao Ji(高吉), Yang Tao(杨涛), Ma Ping(马平), and Dai Yuan-Dong(戴远东) Simulation of dielectric resonator for high-Tc radio frequency superconducting quantum interference device 2010 Chin. Phys. B 19 067402
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