A comparative study of YBa2Cu3O7-$\delta$/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment
Wang Ping(王萍)a)b), Li Jie(李洁)b), Chen Ying-Fei(陈莺飞)b), Li Shao(李绍)b), Wang Jia(王佳)b), Xie Ting-Yue(解廷月)a), and Zheng Dong-Ning(郑东宁)b)†
aSchool of Physics and Electronics Science, Shanxi Datong University, Datong 037009, China; b National Laboratory for Superconductivity, Institute of Physics & Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract Highly epitaxial YBa2Cu3O7-$\delta$ (YBCO) and yttria-stabilized zirconia (YSZ) bilayer thin films have been deposited on silicon-on-insulator (SOI) substrates by using in situ pulsed laser deposition (PLD) technique. In the experiment, the native amorphous SiO2 layers on some of the SOI substrates are removed by dipping them in a 10% HF solution for 15 s. Comparing several qualities of films grown on substrates with or without HF pretreatment, such as thin film crystallinity, general surface roughness, temperature dependence of resistance, surface morphology, as well as average crack spacing and crack width, naturally leads to the conclusion that preserving the native SiO2 layer on the surface of the SOI substrate can not only simplify the experimental process but can also achieve fairly high quality YSZ and YBCO thin films.
Received: 24 November 2008
Revised: 18 December 2008
Accepted manuscript online:
(Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))
Fund: Project
supported by the National Natural Science Foundation of China (Grant
Nos 50672125 and 10574154), the Natural Science Foundation of Shanxi
Province, China (Grant No 2009011003-1), and the Youth Foundation of
Shanxi Datong University, China (Grant N
Cite this article:
Wang Ping(王萍), Li Jie(李洁), Chen Ying-Fei(陈莺飞), Li Shao(李绍), Wang Jia(王佳), Xie Ting-Yue(解廷月), and Zheng Dong-Ning(郑东宁) A comparative study of YBa2Cu3O7-$\delta$/YSZ bilayer films deposited on silicon-on-insulator substrates with and without HF pretreatment 2009 Chin. Phys. B 18 1679
The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). Chin. Phys. B, 2022, 31(4): 048503.
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