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Chin. Phys. B, 2008, Vol. 17(2): 669-673    DOI: 10.1088/1674-1056/17/2/051
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Formation mechanism of ordered stress-relief patterns in a free sustained Cu film system

Chen Miao-Gen(陈苗根), Xie Jian-Ping(谢建平), Jin Jin-Sheng(金进生), Xia A-Gen(夏阿根), and Ye Gao-Xiang(叶高翔)
Department of Physics, Zhejiang University, Hangzhou 310027,China
Abstract  A nearly free sustained copper (Cu) film system has been successfully fabricated by thermal evaporation deposition of Cu atoms on silicone oil surfaces, and a characteristic ordered pattern has been systematically studied. The ordered pattern, namely, band, is composed of a large number of parallel key-formed domains with different width $w$ but nearly uniform length $L$; its characteristic values of $w$ and $L$ are very susceptible to the growth period, deposition rate and nominal film thickness. The formation mechanism of the ordered patterns is well explained in terms of the relaxation of the internal stress in the films, which is related to the nearly zero adhesion of the solid-liquid interface. By using a two-time deposition method, it is confirmed that the ordered patterns really form in the vacuum chamber.
Keywords:  ordered pattern      thin film      internal stress  
Received:  10 February 2007      Revised:  25 July 2007      Accepted manuscript online: 
PACS:  68.60.Bs (Mechanical and acoustical properties)  
  81.15.Ef  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10574109), the Zhejiang Provincial Science and Technology Department (Grant No 2005C24008) and the Zhejiang Provincial Natural Science Foundation (Grant No. Y604064).

Cite this article: 

Chen Miao-Gen(陈苗根), Xie Jian-Ping(谢建平), Jin Jin-Sheng(金进生), Xia A-Gen(夏阿根), and Ye Gao-Xiang(叶高翔) Formation mechanism of ordered stress-relief patterns in a free sustained Cu film system 2008 Chin. Phys. B 17 669

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