Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon
Liao Yan-Ping (廖燕平)ab, Shao Xi-Bin (邵喜斌)ac, Gao Feng-Li (郜峰利)d, Luo Wen-Sheng (骆文生)a, Wu Yuan (吴渊)a, Fu Guo-Zhu (付国柱)a, Jing Hai (荆海)ac, Ma Kai (马凯)a
a Chang Chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, North Liquid Crystal Engineering Research and Development Center, Changchun 130031, China; b Graduate School of Chinese Academy of Sciences, Beijing 100049, China; c Jilin North Cai Jing Digital Electron Limited Corporation, Changchun 130031, China; d College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
Abstract Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi$_{2})$ assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi$_{2}$ precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi$_{2}$ precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi$_{2}$ precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.
Received: 07 September 2005
Revised: 06 March 2006
Accepted manuscript online:
(Methods of deposition of films and coatings; film growth and epitaxy)
Fund: Project supported by the National High Technology Development Program of China (Grant No 2002AA303250) and by the National Natural Science Foundation of China (Grant No 60576056).
Cite this article:
Liao Yan-Ping (廖燕平), Shao Xi-Bin (邵喜斌), Gao Feng-Li (郜峰利), Luo Wen-Sheng (骆文生), Wu Yuan (吴渊), Fu Guo-Zhu (付国柱), Jing Hai (荆海), Ma Kai (马凯) Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon 2006 Chinese Physics 15 1310
Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs Meng Zhi-Guo(孟志国), Li Yang(李阳), Wu Chun-Ya(吴春亚), Zhao Shu-Yun(赵淑芸), Li Juan(李娟), Man Wong(王文), Hoi Sing-Kwok(郭海诚), and Xiong Shao-Zhen(熊绍珍). Chin. Phys. B, 2008, 17(4): 1415-1420.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
