a Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China; b Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University, Saga 840-8502, Japan
Abstract Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion, etched p-ZnTe samples. The averaged thickness of the surface damaged layer is found to be in the range of 1.0－1.5μm, and the, etch-induced defect density is in the order of $10^{18}$cm$^{-3}$. The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency (rf) power. With the aid of related theories, we discuss the effects of the rf plasma power and the concentration of CH$_4$/H$_2$ on the damage, disorder, and the second-order Raman structures in p-ZnTe samples.
Received: 22 April 2003
Revised: 30 November 2002
Accepted manuscript online:
(Experimental determination of defects by diffraction and scattering)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 10125416).
Cite this article:
Wu Sen (吴森), Shen Wen-Zhong (沈文忠), Ogawa Hiroshi (小川博司), Guo Qi-Xin (郭其新) Study of far-infrared reflection and Raman scattering spectra in reactive ion, etched ZnTe 2003 Chinese Physics 12 1026
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