a Institute of Technical Physics, Zhejiang University of Technology, Hangzhou 310014, China b Center of Fundamental Physics, University of Science and Technology of China, Hefei 230026, China;
Abstract Fractal growth of thin films at low temperature (50－175 K) is simulated by Monte Carlo method. It is shown that the thin film growth is quite different from the diffusion-limited aggregation (DLA) model when the coverage is larger than 0.1 ML. The average branch width of clusters increases with increasing temperature and it usually larger than the branch width (1.9 atom) in the classic DLA model. The average fractal dimension of clusters increases also with increasing coverage while the fractal dimension of DLA model remains constant. This difference comes from the weak screening effect during the late stage of thin film growth. The relationship between the saturation island number ns and deposition interval $\Delta t$ is described in a power law: $n_{\rm s}\propto \Delta t^{\gamma}$, where ${\gamma}$=-0.332 is very close to the theoretical value -1/3 of rate equations from nucleation theory.
Received: 26 August 1999
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 49672095) and the Natural Science Foundation of Zhejiang Province of China (Grant No. 198034), and the Foundation of Engineering Science Center of Zhejiang University of Tech
Cite this article:
Wu Feng-min (吴锋民), Zhu Qi-peng (朱启鹏), Shi Jian-qing (施建青), Wu Zi-qin (吴自勤) SIMULATION OF FRACTAL GROWTH OF THIN FILMS AT LOW TEMPERATURE 2000 Chinese Physics 9 49
A new modulated structure in α-Fe2O3 nanowires Cai Rong-Sheng (蔡鎔声), Shang Lei (商蕾), Liu Xue-Hua (刘雪华), Wang Yi-Qian (王乙潜), Yuan Lu (袁露), Zhou Guang-Wen (周光文). Chin. Phys. B, 2013, 22(10): 107401.
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