CALCULATION OF ELECTRONIC STATES OF Si(337) SURFACE

doi:10.1088/1004-423X/8/1/008

Abstract

Abstract Using the scattering-theoretic method and employing the nearest-neighbor tight-binding formalism to describe the bulk electronic structure, we have studied the electronic structure of Si(337) surface. The wave-vector-resolved layer densities of states are presented. The results show that there are six surface bound states in the range from -12.0 to 2.0 eV. Some properties of these surface states are discussed.

Received: 27 April 1998
Revised: 10 September 1998
Accepted manuscript online:

PACS:	71.20.Mq	(Elemental semiconductors)
	71.15.Ap	(Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.))
	73.20.At	(Surface states, band structure, electron density of states)
	68.47.Fg	(Semiconductor surfaces)

Fund: Project supported by the Natural Science Foundation of Henan Province (Grant No.984040500), China.

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Jia Yu (贾瑜), Ma Bing-xian (马丙现), Shen San-guo (申三国), Yang Shi-e (杨仕娥) CALCULATION OF ELECTRONIC STATES OF Si(337) SURFACE 1999 Acta Physica Sinica (Overseas Edition) 8 46

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