THE DISTRIBUTION OF Sb ATOMS IN $\delta$-DOPED SILICON CRYSTAL
Jia Quan-jie (贾全杰)a, Zheng Wen-li (郑文莉)a, Wang Zhou-guang (王洲光)a, Wang Jun (王俊)a, Jiang Xiao-ming (姜晓明)a, Jiang Zui-min (蒋最敏)b, Pei Cheng-wen (裴成文)b, Qin Jie (秦捷)b, Hu Dong-zhi (胡冬枝)b
a Institute of High Energy Physics, Academia Sinica, Beijing 100039, China; b State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, China
Abstract The distribution of Sb atoms in $\delta$-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.
Received: 07 October 1997
Revised: 16 April 1998
Accepted manuscript online:
PACS:
68.55.Ln
(Defects and impurities: doping, implantation, distribution, concentration, etc.)
(Molecular, atomic, ion, and chemical beam epitaxy)
Fund: Project supported by the National Natural Science Foundation of China under the Grant No. 19674058.
Cite this article:
Jia Quan-jie (贾全杰), Zheng Wen-li (郑文莉), Wang Zhou-guang (王洲光), Wang Jun (王俊), Jiang Xiao-ming (姜晓明), Jiang Zui-min (蒋最敏), Pei Cheng-wen (裴成文), Qin Jie (秦捷), Hu Dong-zhi (胡冬枝) THE DISTRIBUTION OF Sb ATOMS IN $\delta$-DOPED SILICON CRYSTAL 1998 Acta Physica Sinica (Overseas Edition) 7 695
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