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THE DISTRIBUTION OF Sb ATOMS IN $\delta$-DOPED SILICON CRYSTAL
Jia Quan-jie (贾全杰), Zheng Wen-li (郑文莉), Wang Zhou-guang (王洲光), Wang Jun (王俊), Jiang Xiao-ming (姜晓明), Jiang Zui-min (蒋最敏), Pei Cheng-wen (裴成文), Qin Jie (秦捷), Hu Dong-zhi (胡冬枝)
Acta Physica Sinica (Overseas Edition), 1998, 7 (9):
695-702.
DOI: 10.1088/1004-423X/7/9/008
The distribution of Sb atoms in $\delta$-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.
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