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Chin. Phys. B, 2025, Vol. 34(3): 034204    DOI: 10.1088/1674-1056/ada2ef
ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Prev   Next  

Passive on-chip isolators based on the thin-film lithium niobate platform

Jiacheng Liu(刘嘉成)1, Gongyu Xia(夏功榆)1, Qilin Hong(洪琦琳)1, Pingyu Zhu(朱枰谕)2, Kai-Kai Zhang(张凯凯)2, Keyu Xia(夏可宇)3, Ping Xu(徐平)2, Shiqiao Qin(秦石乔)1, and Zhihong Zhu (朱志宏)1,†
1 College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha 410073, China;
2 Institute for Quantum Information and State Key Laboratory of High-Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China;
3 College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
Abstract  Optical isolators, the photonic analogs of electronic diodes, are essential for ensuring the unidirectional flow of light in optical systems, thereby mitigating the destabilizing effects of back reflections. Thin-film lithium niobate (TFLN), hailed as "the silicon of photonics," has emerged as a pivotal material in the realm of chip-scale nonlinear optics, propelling the demand for compact optical isolators. We report a breakthrough in the development of a fully passive, integrated optical isolator on the TFLN platform, leveraging the Kerr effect to achieve an impressive 10.3 dB of isolation with a minimal insertion loss of 1.87 dB. Further theoretical simulations have demonstrated that our design, when applied to a microring resonator with a $Q$ factor of 5$\times10^{6}$, can achieve 20 dB of isolation with an input power of merely 8 mW. This advancement underscores the immense potential of lithium niobate-based Kerr-effect isolators in propelling the integration and application of high-performance on-chip lasers, heralding a new era in integrated photonics.
Keywords:  thin-film lithium niobate      Kerr effect      optical isolator  
Received:  17 September 2024      Revised:  12 December 2024      Accepted manuscript online:  24 December 2024
PACS:  42.82.-m (Integrated optics)  
  42.82.Et (Waveguides, couplers, and arrays)  
  42.65.Hw (Phase conjugation; photorefractive and Kerr effects)  
Fund: Project supported by the National Key Research and Development Program of China (Grant Nos. 2022YFF0712800 and 2019YFA0308700).
Corresponding Authors:  Zhihong Zhu     E-mail:  zzhwcx@163.com

Cite this article: 

Jiacheng Liu(刘嘉成), Gongyu Xia(夏功榆), Qilin Hong(洪琦琳), Pingyu Zhu(朱枰谕), Kai-Kai Zhang(张凯凯), Keyu Xia(夏可宇), Ping Xu(徐平), Shiqiao Qin(秦石乔), and Zhihong Zhu (朱志宏) Passive on-chip isolators based on the thin-film lithium niobate platform 2025 Chin. Phys. B 34 034204

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