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Special Issue:
SPECIAL TOPIC—Post-Moore era: Materials and device physics
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| SPECIAL TOPIC—Post-Moore era: Materials and device physics |
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P-type cold-source field-effect transistors with TcX2 and ReX2 (X=S, Se) cold source electrodes: A computational study |
| Qianwen Wang(汪倩文)1, Jixuan Wu(武继璇)2, Xuepeng Zhan(詹学鹏)2, Pengpeng Sang(桑鹏鹏)2,†, and Jiezhi Chen(陈杰智)2,‡ |
1 School of Information Science & Technology, Qingdao University of Science & Technology, Qingdao 266000, China;
2 School of Information Science and Engineering, Shandong University, Qingdao 266000, China |
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Abstract Cold-source field-effect transistors (CS-FETs) have been developed to overcome the major challenge of power dissipation in modern integrated circuits. Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing (SS). In this work, regarding the p-type CS-FETs, we propose TcX2 and ReX2 (X = S, Se) as the injection source to realize the sub-thermal switching for holes. First-principles calculations unveils the cold-metal characteristics of monolayer TcX2 and ReX2, possessing a sub-gap below the Fermi level and a decreasing DOS with energy. Quantum device simulations demonstrate that TcX2 and ReX2 can enable the cold source effects in WSe2 p-type FETs, achieving steep SS of 29-38 mV/dec and high on/off ratios of (2.3-5.6)×107. Moreover, multilayer ReS2 retains the cold metal characteristic, thus ensuring similar CS-FET performances to that of the monolayer source. This work underlines the significance of cold metals for the design of p-type CS-FETs.
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Received: 26 July 2023
Revised: 12 September 2023
Accepted manuscript online: 07 October 2023
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PACS:
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72.90.+y
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(Other topics in electronic transport in condensed matter)
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81.05.Zx
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(New materials: theory, design, and fabrication)
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05.60.Gg
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(Quantum transport)
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85.30.Tv
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(Field effect devices)
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| Fund: Project was supported by the National Natural Science Foundation of China (Grant Nos.62034006, 92264201, and 62104134) and the Natural Science Foundation of Shandong Province of China (Grant Nos.ZR2023QF076 and ZR2023QF054). |
Corresponding Authors:
Pengpeng Sang, Jiezhi Chen
E-mail: ppsang@sdu.edu.cn;chen.jiezhi@sdu.edu.cn
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Cite this article:
Qianwen Wang(汪倩文), Jixuan Wu(武继璇), Xuepeng Zhan(詹学鹏),Pengpeng Sang(桑鹏鹏), and Jiezhi Chen(陈杰智) P-type cold-source field-effect transistors with TcX2 and ReX2 (X=S, Se) cold source electrodes: A computational study 2023 Chin. Phys. B 32 127203
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[1] Waldrop M M 2016 Nature 530 144
[2] Takagi S, Iisawa T, Tezuka T, Numata T, Nakaharai S, Hirashita N, Moriyama Y, Usuda K, Toyoda E, Dissanayake S, Shichijo M, Nakane R, Sugahara S, Takenaka M and Sugiyama N 2008 IEEE Trans. Electron Devices 55 21
[3] Ionescu A M and Riel H 2011 Nature 479 329
[4] Kim S, Myeong G, Shin W, Lim H, Kim B, Jin T, Chang S, Watanabe K, Taniguchi T and Cho S 2020 Nat. Nanotechnol. 15 203
[5] Sarkar D, Xie X, Liu W, Cao W, Kang J, Gong Y, Kraemer S, Ajayan P M and Banerjee K 2015 Nature 526 91
[6] Appenzeller J, Lin Y M, Knoch J and Avouris P 2004 Phys. Rev. Lett. 93 196805
[7] Zhou W, Zhang S, Wang Y, Guo S, Qu H, Bai P, Li Z and Zeng H 2020 Adv. Electron. Mater. 6 1901281
[8] Zhang S, Guo S, Chen Z, Wang Y, Gao H, Gomez-Herrero J, Ares P, Zamora F, Zhu Z and Zeng H 2018 Chem. Soc. Rev. 47 982
[9] Ersan F, Kecik D, Ozcelik V, Kadioglu Y, Akturk O, Durgun E, Akturk E and Ciraci S 2019 Appl. Phys. Rev. 6 021308
[10] Hong Y, Liu Z, Wang L, Zhou T, Ma W, Xu C, Feng S, Chen L, Chen M, Sun D, Chen X, Cheng H and Ren W 2020 Science 369 670
[11] Wang L, Shi Y, Liu M, Zhang A, Hong Y, Li R, Gao Q, Chen M, Ren W, Cheng H, Li Y and Chen X 2021 Nat. Commun. 12 2361
[12] Cao L, Zhou G, Wang Q, Ang L K and Ang Y 2021 Phys. Rev. Appl. 118 013106
[13] Wang Q, Cao L, Liang S, Wu W, Wang G, Lee C, Ong W, Yang H, Ang L, Yang S and Ang Y 2021 NPJ 2D Mater. Appl. 5 71
[14] Appenzeller J, Lin Y M, Knoch J and Avouris P 2004 Phys. Rev. Lett. 93 196805
[15] Ionescu A M and Riel H 2011 Nature 479 329
[16] Shin G H, Koo B, Park H, Woo Y, Lee J E and Choi S Y 2018 ACS Appl. Mater. Interfaces 10 40212
[17] Sarkar D, Xie X, Liu W, Cao W, Kang J, Gong Y, Kraemer S, Ajayan P M and Banerjee K 2015 Nature 526 91
[18] Cao W, Sarkar D, Khatami Y, Kang J and Banerjee K 2014 AIP Adv. 4 067141
[19] Lv Y, Qin W, Huang Q, Chang S, Wang H and He J 2017 IEEE Trans. Electron Devices 64 2694
[20] Brahma M, Kabiraj A, Saha D and Mahapatra S 2018 Sci. Rep. 8 5993
[21] Jo J and Shin C 2016 IEEE Electron Device Lett. 37 245
[22] Kwon D, Chatterjee K, Tan A J, Yadav A K, Zhou H, Sachid A B, Reis R D, Hu C and Salahuddin S 2018 IEEE Electron Device Lett. 39 300
[23] Guo S, Prentki R J, Jin K, Chen C L and Guo H 2021 IEEE Trans. Electron Devices 68 911
[24] Yu Z, Wang H, Li W, Xu S, Song X, Wang S, Wang P, Zhou P, Shi Y, Chai Y and Wang X 2017 Proceedings of IEEE International Electron Device Meeting (IEDM), December 2--6, 2017, San Francisco, USA, pp. 23.6.1
[25] Qiu C, Liu F, Xu L, Deng B, Xiao M, Si J, Lin L, Zhang Z, Wang J, Guo H, Peng H and Peng L M 2018 Science 361 387
[26] Liu F, Qiu C, Zhang Z, Peng L M, Wang J, Wu Z and Guo H 2018 Proceedings of IEEE International Electron Device Meeting (IEDM), December 1--5, 2018, San Francisco, USA, pp. 31.2.1
[27] Tang Z, Liu C, Huang X, Zeng S, Liu L, Li J, Jiang Y G, Zhang D W and Zhou P 2021 Nano Lett. 21 1758
[28] Liu F, Qiu C, Zhang Z, Peng L M, Wang J and Guo H 2018 IEEE Trans. Electron Devices 65 2736
[29] Wang Q, Sang P, Ma X, Wang F, Wei W, Zhang W, Li Y and Chen J 2018 Proceedings of IEEE International Electron Device Meeting (IEDM), December 12--18, 2018, San Francisco, USA, pp. 22.4.1
[30] Wang Q, Sang P, Wang F, Wei W, Li Y and Chen J 2021 Appl. Phys. Express 14 074003
[31] Nandan K, Bhowmick B, Chauhan Y and Agarwal A 2023 Phys. Rev. Appl. 19 064058
[32] Wang Q, Sang P, Wang F, Wei W and Chen J 2021 IEEE Trans. Electron Devices 68 4758
[33] Liu F 2020 Phys. Rev. Appl. 13 064037
[34] Shin W, Myeong G, Sung K, Kim S, Lim H, Kim B, Jin T, Park J, Watanabe K, Taniguchi T, Liu F and Cho S 2022 Appl. Phys. Lett. 120 243506
[35] Smidstrup S, Markussen T, Vancraeyveld P, et al. 2020 J. Phys. Condens. Matter 32 015901
[36] Van Setten M J, Giantomassi M, Bousquet E, Verstraete M J, Hamann D R, Gonze X and Rignanese J M 2018 Comput. Phys. Commun. 226 39
[37] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[38] Büttiker M, Imry Y, Landauer R and Pinhas S 1985 Phys. Rev. B: Condens. Matter 31 6207
[39] Zhang Y, Yin L, Chu J, Shifa T, Xia J, Wang F, Wen Y, Zhan X, Wang Z and He J 2018 Adv. Mater. 30 1803665
[40] Bertolazzi S, Brivio J and Kis A 2011 ACS Nano 5 9703
[41] International technology roadmap for semiconductors (ITRS)
[42] Pan Y, Dai J, Xu L, Yang J, Zhang X, Yan J, Shi B, Liu S, Hu H, Wu M and Lu J 2020 Phys. Rev. Appl. 14 024016
[43] Quhe R, Liu J, Wu J, Yang J, Wang Y, Li Q, Li T, Guo Y, Yang J, Peng H, Lei M and Lu J 2019 Nanoscale 11 532
[44] Wang Y, Fei R, Quhe R, Li J, Zhang H, Zhang X, Shi B, Xiao L, Song Z, Yang J, Shi J, Pan F and Lu J 2019 ACS Appl. Mater. Interfaces 10 23344
[45] Sun X, Song Z, Huo N, Liu S, Yang C, Yang J, Wang W and Lu J 2021 J. Mater. Chem. C 9 14683 |
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