| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction |
| Shanshan Chen(陈珊珊)1, Xinhao Zhang(张新昊)1, Guangcan Wang(王广灿)1, Shuo Chen(陈朔)1, Heqi Ma(马和奇)1, Tianyu Sun(孙天瑜)1, Baoyuan Man(满宝元)1,2,‡, and Cheng Yang(杨诚)1,2,3,† |
1 School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
2 Institute of Materials and Clean Energy, Shandong Normal University, Jinan 250014, China;
3 Shandong Provincial Engineering and Technical Center of Light Manipulations, Shandong Normal University, Jinan 250014, China |
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Abstract Modulation between optical and ferroelectric properties was realized in a lateral structured ferroelectric CuInP2S6 (CIPS)/semiconductor MoS2 van der Waals heterojunction. The ferroelectric hysteresis loop area was modulated by the optical field. Two types of photodetection properties can be realized in a device by changing the ON and OFF states of the ferroelectric layer. The device was used as a photodetector in the OFF state but not in the ON state. The higher tunnelling electroresistance (~1.4×104) in a lateral structured ferroelectric tunnelling junction was crucial, and it was analyzed and modulated by the barrier height and width of the ferroelectric CIPS/semiconductor MoS2 Schottky junction. The new parameter of the ferroelectric hysteresis loop area as a function of light intensity was introduced to analyze the relationship between the ferroelectric and photodetection properties. The proposed device has potential application as an optoelectronic sensory cell in the biological nervous system or as a new type of photodetector.
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Received: 16 December 2022
Revised: 20 March 2023
Accepted manuscript online: 28 March 2023
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PACS:
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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73.43.Jn
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(Tunneling)
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85.50.Gk
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(Non-volatile ferroelectric memories)
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85.60.-q
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(Optoelectronic devices)
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| Fund: Project supported by the National Natural Science Foundation of China(Grant Nos.11874244 and 11974222). |
Corresponding Authors:
Baoyuan Man, Cheng Yang
E-mail: byman@sdnu.edu.cn;chengyang@sdnu.edu.cn
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Cite this article:
Shanshan Chen(陈珊珊), Xinhao Zhang(张新昊), Guangcan Wang(王广灿), Shuo Chen(陈朔), Heqi Ma(马和奇), Tianyu Sun(孙天瑜), Baoyuan Man(满宝元), and Cheng Yang(杨诚) Modulated optical and ferroelectric properties in a lateral structured ferroelectric/semiconductor van der Waals heterojunction 2023 Chin. Phys. B 32 127301
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