Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

doi:10.1088/1674-1056/ab696f

Abstract Hydrodynamic calculations of the chaotic behaviors in n⁺nn⁺ In_0.53Ga_0.47As devices biased in terahertz (THz) electric field have been carried out. Their different transport characteristics have been carefully investigated by tuning the n-region parameters and the applied ac radiation. The oscillatory mode is found to transit between synchronization and chaos, as verified by the first return map. The transitions result from the mixture of the dc induced oscillation and the one driven by the ac radiation. Our findings will give further and thorough understanding of electron transport in In_0.53Ga_0.47As terahertz oscillator, which is a promising solid-state THz source.

Keywords: terahertz chaotic current oscillation

Received: 12 December 2019
Revised: 03 January 2020
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	73.50.Fq	(High-field and nonlinear effects)
	85.30.Fg	(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11604126) and China Scholarship Council (Grant No. 201808695016).

Corresponding Authors: Wei Feng
E-mail: wfeng@ujs.edu.cn

Cite this article:

Wei Feng(冯伟) Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region 2020 Chin. Phys. B 29 047302

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Hydrodynamic simulation of chaotic dynamics in InGaAs oscillator in terahertz region

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