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Chin. Phys. B, 2017, Vol. 26(9): 095206    DOI: 10.1088/1674-1056/26/9/095206
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Initial growth and microstructure feature of Ag films prepared by very-high-frequency magnetron sputtering

Yue Zhang(张悦)1, Chao Ye(叶超)1,2, Xiang-Ying Wang(王响英)3, Pei-Fang Yang(杨培芳)1, Jia-Min Guo(郭佳敏)1, Su Zhang(张苏)3
1 College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, China;
2 Key Laboratory of Thin Films of Jiangsu Province, Soochow University, Suzhou 215006, China;
3 Medical College, Soochow University, Suzhou 215123, China
Abstract  

The initial growth and microstructure feature of Ag films formation were investigated, which were prepared by using the very-high-frequency (VHF) (60 MHz) magnetron sputtering. Because of the moderate energy and very low flux density of ions impinging on the substrate, the evolutions of initial growth for Ag films formation were well controlled by varying the sputtering power. It was found that the initial growth of Ag films followed the island (Volmer-Weber, VW) growth mode, but before the island nucleation, the adsorption of Ag nanoparticles and the formation of Ag clusters dominated the growth. Therefore, the whole initial stages of Ag films formation included the adsorption of nanoparticles, the formation of clusters, the nucleation by the nanoparticles and clusters simultaneously, the islands formation, and the coalescence of islands.

Keywords:  Ag film      initial growth      very-high-frequency sputtering  
Received:  19 May 2017      Revised:  12 June 2017      Accepted manuscript online: 
PACS:  52.80.Pi (High-frequency and RF discharges)  
  81.15.Cd (Deposition by sputtering)  
  68.55.Jk  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos. 11675118 and 11275136).

Corresponding Authors:  Chao Ye     E-mail:  cye@suda.edu.cn

Cite this article: 

Yue Zhang(张悦), Chao Ye(叶超), Xiang-Ying Wang(王响英), Pei-Fang Yang(杨培芳), Jia-Min Guo(郭佳敏), Su Zhang(张苏) Initial growth and microstructure feature of Ag films prepared by very-high-frequency magnetron sputtering 2017 Chin. Phys. B 26 095206

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