Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

doi:10.1088/1674-1056/26/3/038102

Abstract Compositionally undulating step-graded Al(Ga)In_xAs (x=0.05-0.52) buffers with the following InP layer were grown by metal-organic chemical vapor deposition (MOCVD) on (001) GaAs with a 15° miscut. The dislocation distribution and tilts of the epilayers were examined using x-ray rocking curve and (004) reciprocal space maps (RSM) along two orthogonal <110> directions. The results suggested that such reverse-graded layers have different effects on α and β dislocations. A higher dislocation density was observed along the [110] direction and an epilayer tilt of -1.43° was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples, the dislocation density is normally higher along the [1-10] direction.

Keywords: Al(Ga)InAs reverse-graded layers dislocation distribution tilt

Received: 08 November 2016
Revised: 13 December 2016
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.05.-t	(Specific materials: fabrication, treatment, testing, and analysis)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376065).

Corresponding Authors: Jianrong Dong
E-mail: jrdong2007@sinano.ac.cn

Cite this article:

Yang He(何洋), Yu-run Sun(孙玉润), Yongming Zhao(赵勇明), Shuzhen Yu(于淑珍), Jianrong Dong(董建荣) Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates 2017 Chin. Phys. B 26 038102

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Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates

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