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An efficient continuous-wave YVO4/Nd: YVO4/YVO4 self-Raman laser pumped by a wavelength-locked 878.9 nm laser diode |
Li Fan(樊莉)1,2, Weiqian Zhao(赵伟倩)1, Xin Qiao(乔鑫)1, Changquan Xia(夏长权)1, Lichun Wang(汪丽春)1, Huibo Fan(范会博)1, Mingya Shen(沈明亚)1 |
1 College of Physics Science and Technology, Institute of Applied Photonic Technology, Yangzhou University, Yangzhou 225002, China; 2 National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China |
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Abstract We report an efficient continuous-wave self-Raman laser at 1176 nm based on a 20-mm-long composite YVO4/Nd:YVO4/YVO4 crystal and pumped by a wavelength-locked 878.9 nm diode laser. A maximum output power of 5.3 W is achieved at a pump power of 26 W, corresponding to an optical conversion efficiency of 20% and a slope efficiency of 21%. The Raman threshold for the diode pump power was only 0.92 W. The results reveal that in-band pumping by a wavelength-locked diode laser significantly enhances output power and efficiency of self-Raman lasers by virtue of improved pump absorption and relieved thermal loading.
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Received: 18 April 2016
Revised: 30 June 2016
Accepted manuscript online:
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Fund: Project supported by the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK20130453 and BK20130434) and the National Natural Science Foundation of China (Grant No. 11304271). |
Corresponding Authors:
Li Fan
E-mail: fanli@yzu.edu.cn
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Cite this article:
Li Fan(樊莉), Weiqian Zhao(赵伟倩), Xin Qiao(乔鑫), Changquan Xia(夏长权), Lichun Wang(汪丽春), Huibo Fan(范会博), Mingya Shen(沈明亚) An efficient continuous-wave YVO4/Nd: YVO4/YVO4 self-Raman laser pumped by a wavelength-locked 878.9 nm laser diode 2016 Chin. Phys. B 25 114207
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