Modeling the reactive sputter deposition of Ti-doped VOx thin films

doi:10.1088/1674-1056/24/6/068104

Abstract In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VO_x deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VO_x thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy (EDX). A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.

Keywords: Ti-doped VO_x EDX

Received: 22 October 2014
Revised: 18 December 2014
Accepted manuscript online:

PACS:	81.15.Cd	(Deposition by sputtering)
	85.40.Sz	(Deposition technology)

Fund: Project partially supported by the National Natural Science Foundation of China (Grant Nos. 61405027, 61421002, and 61235006) and the Postdoctoral Science Foundation of China (Grant No. 2014M562296).

Corresponding Authors: Yu He
E-mail: yuhe@uestc.edu.cn

About author: 81.15.Cd; 85.40.Sz

Cite this article:

Wang Tao (王涛), Yu He (于贺), Gu De-En (顾德恩), Guo Rui (郭睿), Dong Xiang (董翔), Jiang Ya-Dong (蒋亚东), Hu Rui-Lin (胡锐麟) Modeling the reactive sputter deposition of Ti-doped VO_x thin films 2015 Chin. Phys. B 24 068104

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Modeling the reactive sputter deposition of Ti-doped VO_x thin films