CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
Prev
Next
|
|
|
Electrohydrodynamic direct-writing of conductor-insulator-conductor multi-layer interconnection |
Zheng Gao-Feng (郑高峰)a, Pei Yan-Bo (裴艳博)a b, Wang Xiang (王翔)a, Zheng Jian-Yi (郑建毅)a, Sun Dao-Heng (孙道恒)a |
a Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005, China; b School of Mechanical and Electrical Engineering, Harbin Institute of Technology, Harbin 150001, China |
|
|
Abstract A multi-layer interconnection structure is a basic component of electronic devices, and printing of the multi-layer interconnection structure is the key process in printed electronics. In this work, electrohydrodynamic direct-writing (EDW) is utilized to print the conductor-insulator-conductor multi-layer interconnection structure. Silver ink is chosen to print the conductor pattern, and a polyvinylpyrrolidone (PVP) solution is utilized to fabricate the insulator layer between the bottom and top conductor patterns. The influences of EDW process parameters on the line width of the printed conductor and insulator patterns are studied systematically. The obtained results show that the line width of the printed structure increases with the increase of the flow rate, but decreases with the increase of applied voltage and PVP content in the solution. The average resistivity values of the bottom and top silver conductor tracks are determined to be 1.34×10-7 Ω·m and 1.39×10-7 Ω·m, respectively. The printed PVP layer between the two conductor tracks is well insulated, which can meet the insulation requirement of the electronic devices. This study offers an alternative, fast, and cost-effective method of fabricating conductor-insulator-conductor multi-layer interconnections in the electronic industry.
|
Received: 12 September 2013
Revised: 04 January 2014
Accepted manuscript online:
|
PACS:
|
61.30.Pq
|
(Microconfined liquid crystals: droplets, cylinders, randomly confined liquid crystals, polymer dispersed liquid crystals, and porous systems)
|
|
81.16.-c
|
(Methods of micro- and nanofabrication and processing)
|
|
85.40.-e
|
(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
|
|
94.20.Ss
|
(Electric fields; current system)
|
|
Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 51035002), the National Natural Science Foundation of China (Grant No. 51305373), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120121120035). |
Corresponding Authors:
Zheng Jian-Yi
E-mail: zjy@xmu.edu.cn
|
Cite this article:
Zheng Gao-Feng (郑高峰), Pei Yan-Bo (裴艳博), Wang Xiang (王翔), Zheng Jian-Yi (郑建毅), Sun Dao-Heng (孙道恒) Electrohydrodynamic direct-writing of conductor-insulator-conductor multi-layer interconnection 2014 Chin. Phys. B 23 066102
|
[1] |
Lee S, Kim J, Choi J, Park H, Ha J, Kim Y, Rogers J A and Paik U 2012 Appl. Phys. Lett. 100 102108
|
[2] |
Khan S, Doh Y H, Khan A, Rahman A, Choi K H and Kim D S 2011 Curr. Appl. Phys. 11 S271
|
[3] |
Alexander Lange, Andreas Hollaender and Michael Wegener 2013 Mater. Sci. Eng. B: Adv. 178 299
|
[4] |
Hwang M S, Jeong B Y, Moon J, Chun S K and Kim J 2011 Mater. Sci. Eng. B: Adv. 176 1128
|
[5] |
Kim W J, Kim S J, Cartwright A N and Prasad P N 2013 Nanotechnology 24 065302
|
[6] |
Ye J S, Wang J Z, Huang Q L, Dong B Z, Zhang Y and Yang G Z 2013 Chin. Phys. B 22 034201
|
[7] |
Alikhanzadeh-Arani S, Almasi-Kashi M and Ramazani A 2013 Curr. Appl. Phys. 13 664
|
[8] |
Zhang P Z, Li R S, Pan X J and Xie E Q 2013 Chin. Phys. B 22 058106
|
[9] |
Lee H, Park S, Lee J, Lee Y, Shin D, Jeong K and Yi Y 2013 Appl. Phys. Lett. 102 033302
|
[10] |
Song D M, Tang Z X, Zhao L, Sui Z, Wen S C and Fan D Y 2013 Chin. Phys. Lett. 30 044206
|
[11] |
Singh M, Haverinen H M, Dhagat P and Jabbour G E 2010 Adv. Mater. 22 673
|
[12] |
Lee J, Chung S, Song H, Kim S and Hong Y 2013 J. Phys. D: Appl. Phys. 46 105305
|
[13] |
Lau P H, Takei K, Wang C, Ju Y, Kim J, Yu Z, Takahashi T, Cho G and Javey A 2013 Nano. Lett. 13 3864
|
[14] |
Chung S, Kim S O, Kwon S K, Lee C and Hong Y 2011 IEEE Electron. Dev. Lett. 32 1134.
|
[15] |
Ding Y, Huang E, Lam K S and Pan T 2013 Lab. Chip. 13 1902
|
[16] |
Youn D H, Kim S H, Yang Y S, Lim S C, Kim S J, Ahn S H, Sim H S, Ryu S M, Shin D W and Yoo J B 2009 Appl. Phys. A: Mater. 96 933
|
[17] |
Mishra S, Barton K L, Alleyne A G, Ferreira P M and Rogers J A 2010 J. Micromech. Microeng. 20 095026
|
[18] |
Xu L and Sun D 2013 Appl. Phys. Lett. 102 024101
|
[19] |
Wang X, Xu L, Zheng G, Cheng W and Sun D 2012 Sci. China: Technol. Sci. 55 1603
|
[20] |
Zheng J, Long Y Z, Sun B, Zhang Z H, Shao F, Zhang H D, Zhang Z M and Huang J Y 2012 Chin. Phys. B 21 048102
|
[21] |
Xu S, Zhang Y, Cho J, Lee J, Huang X, Jia L, Fan J A, Su Y, Su J, Zhang H, Cheng H, Lu B, Yu C, Chuang C, Kim T, Song T, Shigeta K, Kang S, Dagdeviren C, Petrov I, Braun P V, Huang Y, Paik U and Rogers J 2013 Nat. Commun. 4 1543
|
[22] |
Jain N, Durcan C A, Jacobs-Gedrim R, Xu Y and Yu B 2013 Nanotechnology 24 355202
|
[23] |
Ghassemi N and Wu K 2012 IEEE T. Anten. Propag. 60 4432
|
[24] |
Nam S, Jiang X, Xiong Q, Ham D and Lieber C M 2009 Proc. Natl. Acad. Sci. 106 21035
|
[25] |
Janeczek K, Koziol G, Jakubowska M, Araźna A, Mlożniak A and Futera K 2013 Mater. Sci. Eng. B: Adv. 178 511
|
[26] |
Xu Z and Lu J Q 2013 IEEE T. Semiconduct. M. 26 23
|
[27] |
Tseng H Y and Subramanian V 2011 Org. Electron. 12 249
|
[28] |
Rahman K, Mustafa M, Muhammad N and Choi K 2012 Electron. Lett. 48 1261
|
[29] |
Kim S H, Hong K, Xie W, Lee K H, Zhang S, Lodge T P and Frisbie C D 2012 Adv. Mater. 25 1822
|
[30] |
Kim S, Won S, Sim G D, Park I and Lee S B 2013 Nanotechnology 24 085701
|
[31] |
Kim B, Nam H, Kim S J, Sung J, Joo S W and Lim G 2011 J. Micromech. Microeng. 21 075020
|
[32] |
Li M M, Long Y Z, Yin H X and Zhang Z M 2011 Chin. Phys. B 20 048101
|
[33] |
Huang Y F, Xu L, Zheng G F, Liu Z P and Sun D H 2010 Chinese Journal of Sensors and Actuators 23 918
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|