CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin–orbit coupling |
Li Yun(李云)† |
Department of Materials Science and Engineering, Yunnan University, Kunming 650091, China; Department of Chemistry, Seoul National University, Seoul 151-747, Republic of Korea Department of Chemistry, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea |
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Abstract We present theoretical calculations of spin transport in spin filtering magnetic tunnelling junctions based on the Landauer–Büttiker formalism and taking into account the spin–orbit coupling (SOC). It is shown that spin-flip scattering induced by SOC is stronger in parallel alignment of magnetization of the ferromegnet barrier (FB) and the ferromagnetic electrode than that in antiparallel case. The increase of negative tunnelling magnetoresistance with bias is in agreement with recent experimental observation.
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Received: 28 April 2010
Revised: 27 December 2010
Accepted manuscript online:
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PACS:
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73.40.Gk
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(Tunneling)
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73.40.-c
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(Electronic transport in interface structures)
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75.70.Cn
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(Magnetic properties of interfaces (multilayers, superlattices, heterostructures))
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72.15.Gd
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(Galvanomagnetic and other magnetotransport effects)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10564004) and Korea Research Foundation (Grant No. KRF-2005-070-C00065). |
Cite this article:
Li Yun(李云) Negative tunnelling magnetoresistance in spin filtering magnetic junctions with spin–orbit coupling 2011 Chin. Phys. B 20 057303
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