Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition
Gu Guang-Rui(顾广瑞)a)†, Wu Bao-Jia(吴宝嘉)a), Jin Zhe(金哲)a), and Ito Toshimichib)
a Department of Physics, College of Science,Yanbian University, Yanji 133002, China; b Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
Abstract This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/$\mu $m corresponding to a current density of about 1$\mu $A/cm$^{2}$ and a current density of 3.2mA/cm$^{2}$ at an electric field of 10V/$\mu $m were obtained from the carbon film deposited at CH$_{4}$ concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH$_{4}$ concentration and the high emission current appeared at the high CH$_{4}$ concentration was explained by using the Fowler--Nordheim theory.
Received: 22 April 2007
Revised: 25 June 2007
Accepted manuscript online:
PACS:
79.70.+q
(Field emission, ionization, evaporation, and desorption)
(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
Cite this article:
Gu Guang-Rui(顾广瑞), Wu Bao-Jia(吴宝嘉), Jin Zhe(金哲), and Ito Toshimichi Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition 2008 Chin. Phys. B 17 716
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